MG12200D-BA1MM Allicdata Electronics
Allicdata Part #:

F6481-ND

Manufacturer Part#:

MG12200D-BA1MM

Price: $ 86.41
Product Category:

Discrete Semiconductor Products

Manufacturer: Littelfuse Inc.
Short Description: IGBT 1200V 300A 1400W PKG D
More Detail: IGBT Module Half Bridge 1200V 300A 1400W Chassis ...
DataSheet: MG12200D-BA1MM datasheetMG12200D-BA1MM Datasheet/PDF
Quantity: 30
1 +: $ 78.54840
10 +: $ 73.41460
25 +: $ 70.84700
Stock 30Can Ship Immediately
$ 86.41
Specifications
Series: --
Part Status: Active
IGBT Type: --
Configuration: Half Bridge
Voltage - Collector Emitter Breakdown (Max): 1200V
Current - Collector (Ic) (Max): 300A
Power - Max: 1400W
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 200A (Typ)
Current - Collector Cutoff (Max): 1mA
Input Capacitance (Cies) @ Vce: 14.9nF @ 25V
Input: Standard
NTC Thermistor: No
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: Module
Supplier Device Package: D3
Description

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The MG12200D-BA1MM is a type of insulated gate bipolar transistor (IGBT) module. IGBT modules, commonly known as “power transistors”, are components that can be used in high-power applications and provide efficient switching. In many circuits, the IGBT module can take the place of other components such as thyristors in order to provide a more efficient solution.

The MG12200D-BA1MM IGBT module is a 600-volt component, though there are higher and lower-voltage IGBT modules available. This component is capable of passing currents of up to 1200 amperes, which makes it suitable for a wide range of high-power applications. It can be used in switching circuits, motor control circuits, and other high-power systems, as well as in solar inverters, voltage regulators, and other power electronics applications.

The key feature of IGBT modules is that they allow for high-speed switching. This allows them to be extremely efficient in regulating power flows in circuits and also allows them to react quickly to changes in power demand. The IGBT module can quickly turn on and off, thus providing fast and efficient regulation of power.

The working principle of an IGBT module is that it is comprised of two components: the conductive layer and the insulator layer. The conductive layer is composed of two conducting layers that provide the current flow in the module. The insulator layer is a thin oxide film that separates the two layers, and it prevents any undesirable current flow between the two layers. When a high voltage is applied to the conductive layer, the insulation layer prevents any current flow from occurring and the IGBT module is turned off.

When the voltage is reduced, the insulation layer breaks down and the current flows through the conductive layer. The IGBT module will then turn on, allowing it to control power flows in the circuit. By controlling the voltage applied to the module, the power flows can be controlled, allowing the IGBT module to serve as an efficient switch. The switching speed of the module is also much faster than that of other components such as thyristors, leading to increased efficiency in high-power applications.

The MG12200D-BA1MM IGBT module is a typical example of an IGBT module, and can be used in a variety of applications. It is capable of passing large currents, making it suitable for use in high-power systems. It is also capable of fast switching speeds, which allows it to be an efficient switch in many circuits. Thus, these modules are an important component for many power electronics applications, providing efficient and reliable power control.

The specific data is subject to PDF, and the above content is for reference

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