MG12105S-BA1MM Allicdata Electronics
Allicdata Part #:

F6497-ND

Manufacturer Part#:

MG12105S-BA1MM

Price: $ 52.39
Product Category:

Discrete Semiconductor Products

Manufacturer: Littelfuse Inc.
Short Description: IGBT 1200V 150A 690W PKG S
More Detail: IGBT Module Half Bridge 1200V 150A 690W Chassis M...
DataSheet: MG12105S-BA1MM datasheetMG12105S-BA1MM Datasheet/PDF
Quantity: 9
1 +: $ 47.62170
10 +: $ 44.73380
25 +: $ 42.71320
100 +: $ 40.40440
Stock 9Can Ship Immediately
$ 52.39
Specifications
Series: --
Part Status: Active
IGBT Type: --
Configuration: Half Bridge
Voltage - Collector Emitter Breakdown (Max): 1200V
Current - Collector (Ic) (Max): 150A
Power - Max: 690W
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 100A (Typ)
Current - Collector Cutoff (Max): 500µA
Input Capacitance (Cies) @ Vce: 7.43nF @ 25V
Input: Standard
NTC Thermistor: No
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: S-3 Module
Supplier Device Package: S3
Description

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

An MG12105S-BA1MM module uses a modern technology called Insulated Gate Bipolar Transistor (IGBT), which has superior performance while offering enhanced features like high-speed switching, low on-state resistance, and related properties. It is primarily used in power conditioning applications involving variable-frequency drives, welding machines, motor control, UPS systems, AC Inverter, and other similar systems.

The MG12105S-BA1MM module features a diminutive Ultra-Fast Block technology IGBT chip with a Junction-Emitter voltage of 1200V and a Collector-Emitter voltage of 1500V. This module also utilizes 10KV Surge Peak OptiMOS Power MOSFET, 8A/100V ultra-fast recovery diode, and 2A/100V ultra-fast reverse blocking diode.

This module has a sinusoidal V de, T vj of 3.2KV, C es of 1930pF, C rss of 210pF, and Trr of 43ns. The module offers a low on-state resistance of 0.4Ω and a No-load loss of 5.5W and 345KHz switching frequency. Additionally, it offers 2/3 turn-off capability with a simplified structure that helps improve power stability.

The working principle and function of the MG12105S-BA1MM module include gate drive, fast switching and overcurrent protection. The operation of the module is initiated by passing a current through the gate and then initiating a high-speed switching operation.

The MG12105S-BA1MM module also has a fast switching process that prevents the MOSFET from melting due to the fast switching time, and thus provides effective overcurrent protection. The module also improves gate drive reliability which provides more robust operation and prevents unwanted breakdowns and malfunctions.

The MG12105S-BA1MM module is important in power conditioning applications as it provides excellent switching characteristics even at high power levels and contributes to reduce losses in power supplies, as well as noise and heat. In addition, the module helps with power factor correction and enhanced system efficiency. This module is generally associated with low-voltage DC/AC inverters and AC/AC converters.

The MG12105S-BA1MM module offers outstanding performance, reliability, and affordability making it an ideal choice for motor control applications. Moreover, it has a high circuit integration which makes it easier to integrate with other components and significantly reduce board size, providing additional space to add other components.

Overall, the MG12105S-BA1MM module offers excellent performance, efficiency, and reliability at a competitive price. It is a reliable power conditioning module for high-speed switching applications and enables the development of high-efficiency motor control systems.

The specific data is subject to PDF, and the above content is for reference

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