MG12300D-BN2MM Allicdata Electronics
Allicdata Part #:

F6286-ND

Manufacturer Part#:

MG12300D-BN2MM

Price: $ 120.58
Product Category:

Discrete Semiconductor Products

Manufacturer: Littelfuse Inc.
Short Description: IGBT MODULE PACKAGE D1200V 300A
More Detail: IGBT Module Half Bridge 1200V 480A 1450W Chassis ...
DataSheet: MG12300D-BN2MM datasheetMG12300D-BN2MM Datasheet/PDF
Quantity: 31
1 +: $ 109.62000
10 +: $ 104.32800
25 +: $ 100.54800
Stock 31Can Ship Immediately
$ 120.58
Specifications
Series: --
Part Status: Active
IGBT Type: --
Configuration: Half Bridge
Voltage - Collector Emitter Breakdown (Max): 1200V
Current - Collector (Ic) (Max): 480A
Power - Max: 1450W
Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 300A
Current - Collector Cutoff (Max): 1mA
Input Capacitance (Cies) @ Vce: 21nF @ 25V
Input: Standard
NTC Thermistor: No
Operating Temperature: -40°C ~ 125°C (TJ)
Mounting Type: Chassis Mount
Package / Case: D-3 Module
Supplier Device Package: D3
Description

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A MG12300D-BN2MM is a module which contains two insulated-gate bipolar transistors, also known as IGBTs. These transistors form the basis of a wide range of applications, many of which are related to power switching, power control, and energy conversion. This module is designed to provide high total collector current, low switching and conduction losses, high blocking voltage, high quality heat dissipation and low on-state voltage drop.

In this article, we discuss the application fields and working principle of a MG12300D-BN2MM module. First, we will describe the general application fields for this type of module, followed by an explanation of the working principle.

Application Fields

The MG12300D-BN2MM module is used in a range of power control, power switching, and energy conversion applications. It is suitable for use in a wide variety of industries, including automotive, aerospace, and industrial. Common applications include motor drives, high voltage DC converters, and high voltage switches.

The module is also used in renewable energy systems such as photovoltaic inverters, wind turbines, and electric vehicles. This module is suitable for high-voltage systems, up to 1200V. It is a cost-effective solution for high-efficiency power control.

Working Principle

The MG12300D-BN2MM module is composed of two IGBTs, each with its own gate-emitter junction. When a voltage is applied to the gate of an IGBT, it turns on and allows current to flow from the collector to the emitter. The gate control voltage controls the current flow, which in turn controls the power output.

In addition to its power control capability, the IGBT also has a low on-state voltage drop, which helps to reduce power losses in a system. This is a key advantage of IGBTs over other power components such as power MOSFETs.

The MG12300D-BN2MM module has a robust design and a wide temperature range, making it suitable for use in harsh environments. It also has an impressive off-time di/dt capability, which means that it can be used for faster switching applications.

Conclusion

The MG12300D-BN2MM module is a versatile and reliable solution for applications in power control, power switching, and energy conversion. Its low on-state voltage drop and robust design make it particularly suitable for high-voltage systems, offering high performance and low cost.

The specific data is subject to PDF, and the above content is for reference

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