MG12600WB-BR2MM

Series:	--
Part Status:	Active
IGBT Type:	Trench Field Stop
Configuration:	Half Bridge
Voltage - Collector Emitter Breakdown (Max):	1200V
Current - Collector (Ic) (Max):	750A
Power - Max:	2500W
Vce(on) (Max) @ Vge, Ic:	2.5V @ 15V, 600A
Current - Collector Cutoff (Max):	100µA
Input Capacitance (Cies) @ Vce:	60.5nF @ 25V
Input:	Standard
NTC Thermistor:	Yes
Operating Temperature:	-40°C ~ 150°C
Mounting Type:	Chassis Mount
Package / Case:	Module
Supplier Device Package:	WB

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Introduction

MG12600WB-BR2MM is an IGBT module. It belongs to the family of Transistors - IGBTs - Modules. This module supports a wide range of current and voltage. MG12600WB-BR2MM is designed to be a highly efficient and reliable device which provides protection and peace-of-mind to system designers. The module is suitable for switching in medium, high and extra-high voltage applications. The device provides an optimized gate resistance, together with an enhanced current capacity due to its increased air gap between the chip and baseplate.

Application Fields

MG12600WB-BR2MM is suitable for most kinds of medium, high and extra-high voltage applications, such as motor drive, switching operations, industrial use, UPS systems, inverter and HV/LV applications. Due to its high efficiency and fast switching time, it is also a perfect choice for high-frequency pulse applications. And it works well with high-temperature and harsh ambient environment with strong air flows.

Working Principle

MG12600WB-BR2MM is a type of power module which consists of IGBTs, anti-parallel diodes, current sensing circuit and gate drive circuit. To stabilize the voltage and current, a small amount of electrical power is transferred through the module. This power is converted into an electromagnetic field, which can be guided by the module and transmitted to the load. The IGBTs then control the voltage and current across the module.

In order to start the operation, the module needs to be connected to the system. Then the gate voltage needs to be applied across the module. When the gate voltage is enough to exceed the threshold voltage of the IGBTs, the electrical current will flow through them and the device will turn on. In the same way, in order to turn off the device, the applied gate voltage needs to be reduced below the threshold voltage of the IGBTs.

Conclusion

In conclusion, MG12600WB-BR2MM is a type of IGBT module which is suitable for most kinds of medium, high and extra-high voltage applications. The device uses an optimized gate resistance and an enhanced current capacity due to its increased air gap between the chip and baseplate. To control the voltage and current, a small amount of electrical power is transferred through the module and the gate voltage needs to exceed the threshold voltage in order to turn the device on. MG12600WB-BR2MM is thus an efficient and reliable module for a variety of applications.

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