MG1275W-XN2MM

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The MG1275W-XN2MM is an IGBT containing a two module unit. Each module is made up of two IGBTs and two freewheeling diodes, wherein the two IGBTs share a common base lead. The purpose of this product is for use in applications that require high power switching and driving. This IGBT module is suitable for industrial motor drive applications, frequency converters, and traction systems.

The MG1275W-XN2MM is an Insulated Gate Bipolar Transistor (IGBT) Module. It utilizes a 4-level gate and 6-level gate driver circuit topology. This replaces the need for a printed circuit board on which the high and low switches are placed. This significantly reduces the size requirement and power consumption of the application.

The overall structure of the MG1275W-XN2MM includes a high-power rail-to-rail IGBT transistor and two freewheeling diodes in a two-module unit. The two IGBTs share a common gate lead and the gate driver control circuit features high-side gate current sense and gate driver. This gate driver circuit enables an optimized conduction and saturation of the IGBTs for high efficiency operation.

The main features of the MG1275W-XN2MM are the maximum power density and its ability to handle high power-switching applications. It also has a wide range of operating temperatures, from -40°C to 150°C. It has a high current capability, up to 120A, and a highest LM (lowest on-state voltage) of 1.62V. It has a wide frequency range, that is, up to 16kHz. Additionally, the module offers a low conduction loss and high breakdown voltage.

The working principle of the MG1275W-XN2MM is based on the principle of bi-level gate control, which makes use of bipolar transistors connected with junction gates. The gate driver circuit acts as a regulator, which turns on each of the two IGBTs according to the duty cycle of the input signal. The current flow then begins and is controlled by PWM signals.

The bi-level gate control is necessary in order to minimize the switching losses and maintain high efficiency operation. When the power supply voltage drops in both IGBTs, the freewheeling diodes will conduct current from the positive jard towards the negative jard and vice versa, forming a full loop in which the two IGBTs and the two freewheeling diodes are involved. This ensures that power losses are minimized.

The MG1275W-XN2MM has a wide range of application fields. It is ideal for use in motor drives, frequency converters, and traction systems. It is also suitable for other applications requiring high power switching such as uninterruptible power supplies, renewable energy systems, and converters.

The MG1275W-XN2MM is an IGBT module which offers many benefits such as high power density, wide frequency range, low conduction loss, high breakdown voltage, and wide range of operating temperatures. Its bi-level gate-control circuit ensures efficient operation while also minimizing switching losses. This product has a wide range of application fields such as motor drives, frequency converters, traction systems, uninterruptible power supplies, renewable energy systems, and converters.

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