MG1275H-XN2MM

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The MG1275H-XN2MM is an insulated gate bipolar transistor (IGBT) module. It is a type of electronic switch used for high-power semiconductor devices. The core of the MG1275H-XN2MM is the IGBT, which is a particular type of transistor that is suitable for use in high power, high frequency applications. The module also includes other components such as resistor networks, capacitors, and inductors. The MG1275H-XN2MM is rated for operation up to 1700 volts and up to 200a of current, making it suitable for use in a variety of applications.

Application Field

The MG1275H-XN2MM IGBT module is typically used in applications that require high power handling. It is used in high power motor drives, power converters, UPS systems, welders, high voltage DC motor drives, electrical feeders and inverters. It is also used in a wide range of industrial processes, including semiconductor manufacturing, welding, and plasma cutting. Additionally, it is often used in medium voltage applications such as power electronic drives and power supplies.

Working Principle

An IGBT module works in the same way as a standard transistor but differs in the way it is constructed. The IGBT module consists of two main components, the IGBT and the Diode. The IGBT is used to switch the current, while the Diode is used to protect the IGBT from damage. An IGBT module works in the same way as a switch, with the IGBT being used to turn the current on or off. The Diode then protects the IGBT from damage associated with reverse currents.

The MG1275H-XN2MM IGBT module is rated for up to 1700V and up to 200A of current, and offers superior performance when compared to other IGBT modules. It is used in a variety of applications due to its high power handling capabilities and its ability to switch quickly and efficiently. Additionally, it is capable of operating under harsh temperatures and other environmental conditions without losing performance.

Conclusion

The MG1275H-XN2MM IGBT module is a high power module with a wide range of applications. It is suitable for use in a variety of high power industrial processes and its superior performance makes it highly desirable for medium voltage applications. Its two main components, the IGBT and the Diode, allow it to switch current rapidly and efficiently, while protecting it from damage due to reverse currents. All in all, the MG1275H-XN2MM IGBT module is an excellent choice for applications requiring high power handling and superior performance.

The specific data is subject to PDF, and the above content is for reference