MMBT2222AHLT1H Allicdata Electronics
Allicdata Part #:

MMBT2222AHLT1H-ND

Manufacturer Part#:

MMBT2222AHLT1H

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: TRANS NPN 40V 0.6A SOT23
More Detail: Bipolar (BJT) Transistor
DataSheet: MMBT2222AHLT1H datasheetMMBT2222AHLT1H Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: --
Part Status: Active
Transistor Type: --
Vce Saturation (Max) @ Ib, Ic: --
Current - Collector Cutoff (Max): --
DC Current Gain (hFE) (Min) @ Ic, Vce: --
Frequency - Transition: --
Operating Temperature: --
Mounting Type: --
Package / Case: --
Supplier Device Package: --
Description

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The MMBT2222AHLT1H is a single BJT device and is used in many different applications.
A BJT is basically a two terminal device that can be either PNP or NPN. The two terminals are the collector and the base. The collector and base are separated by an insulator, usually an oxide layer. The collector is connected to the source of electrical current which is usually the positive power supply or battery. The base is connected to the signal source, which could be an analog or digital signal, or the input signal from a circuit. The base-emitter junction then acts as a switch, allowing current flow when the voltage across it is greater than the forward voltage drop.
The MMBT2222AHLT1H utilizes this same principle as other typical BJT devices but with a few additional features. The MMBT2222AHLT1H offers better thermal performance, higher current gain and an improved on state resistance. The wider current gain bandwidth allows the MMBT2222AHLT1H to handle higher frequency signals and is capable of handling signals in the range of 10 MHz to 10 GHz.
The MMBT2222AHLT1H can be used in many different applications. Common uses include amplification, oscillators and signal switching. In amplification applications the MMBT2222AHLT1H can be used for high frequency radio frequency (RF) signal amplification, like in cell phones and Wi-Fi systems. In oscillator applications the MMBT222AHLT1H can be used as a gate driver or a frequency synthesizer. In a signal switching application the MMBT222AHLT1H can be used for pulse width modulation (PWM) and driver applications like in power management systems. The MMBT222AHLT1H can also be used for the protection circuit in low power or battery powered systems.
In conclusion, the MMBT2222AHLT1H is a single BJT device that offers high frequency signal handling, better thermal performance, and improved on state resistance. The MMBT222AHLT1H can be used in a variety of applications such as amplification, oscillators, signal switching and protection circuits. The MMBT222AHLT1H is a great choice for any application requiring high frequency signal handling.

The specific data is subject to PDF, and the above content is for reference

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