Allicdata Part #: | MMBT2222LT1OSCT-ND |
Manufacturer Part#: |
MMBT2222LT1 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | TRANS NPN 30V 0.6A SOT23 |
More Detail: | Bipolar (BJT) Transistor NPN 30V 600mA 250MHz 300m... |
DataSheet: | MMBT2222LT1 Datasheet/PDF |
Quantity: | 1000 |
Series: | -- |
Packaging: | Cut Tape (CT) |
Part Status: | Obsolete |
Transistor Type: | NPN |
Current - Collector (Ic) (Max): | 600mA |
Voltage - Collector Emitter Breakdown (Max): | 30V |
Vce Saturation (Max) @ Ib, Ic: | 1.6V @ 50mA, 500mA |
Current - Collector Cutoff (Max): | 10nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 100 @ 150mA, 10V |
Power - Max: | 300mW |
Frequency - Transition: | 250MHz |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | TO-236-3, SC-59, SOT-23-3 |
Supplier Device Package: | SOT-23-3 (TO-236) |
Base Part Number: | MMBT2222 |
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Transistors - Bipolar (BJT) - Single
The MMBT2222LT1 is a widely used PNP Bipolar Junction Transistor (BJT) widely used in many electronic devices. This component is often used in switching and amplifying applications, such as in Radio Frequency (RF) and High-Frequency (HF) circuits. This transistor can handle currents up to 500 milliamperes with a voltage rating of 60V.
Application Field of the MMBT2222LT1
The MMBT2222LT1 is used in a variety of electronic applications, ranging from simple elements such as switches and amplifiers to more complex systems. Common applications for this component include:
- Switching and amplifying applications.
- Video amplifier circuits.
- High frequency circuits.
- Radio frequency circuits.
- Optical circuits.
- Automotive electronics.
- Consumer electronics.
- Audio circuits.
- Industrial wiring.
Working Principle of the MMBT2222LT1
The MMBT2222LT1 is a PNP bipolar junction transistor that utilizes current flow between three electrodes to perform its operations. One of the electrodes is referred to as the emitter, another is called the base, and the third is the collector. When no current is present, the transistor is said to be in the cut-off state. When a small electrical current is applied to the base electrode, the transistor becomes conducting and current flows through the device.
The current from the base to the collector is amplified in the transistor by its action known as the Early effect. This is based on the fact that, when a transistor is biased so that both the emitter and collector are forward biased, the base-collector voltage increases slightly with an increase in the base current. This increase in voltage allows a larger emitter-collector current to flow through the transistor. This is known as the gain of the transistor.
The flowing current through the transistor also creates an effect known as the shot noise. Shot noise is also known as thermal or Johnson noise and describes the random fluctuations in the current of the device due to thermal effects. These fluctuations in current can be seen as noise at the output of the device, and can affect its performance.
Conclusion
The MMBT2222LT1 is a widely used PNP bipolar junction transistor commonly used for switching and amplifying applications, such as in radio frequency and high-frequency circuits. This component can handle currents up to 500 milliamperes with a voltage rating of 60V. Its working principle is based on the flow of electric current through three electrodes referred to as the emitter, the base, and the collector. The current flowing through the transistor is amplified by its action known as the Early effect, and this gain can be affected by shot noise due to thermal effects.
The specific data is subject to PDF, and the above content is for reference
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