MMBT2222LT1G

Series:	--
Packaging:	Tape & Reel (TR)
Part Status:	Active
Transistor Type:	NPN
Current - Collector (Ic) (Max):	600mA
Voltage - Collector Emitter Breakdown (Max):	30V
Vce Saturation (Max) @ Ib, Ic:	1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max):	10nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:	100 @ 150mA, 10V
Power - Max:	300mW
Frequency - Transition:	250MHz
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Surface Mount
Package / Case:	TO-236-3, SC-59, SOT-23-3
Supplier Device Package:	SOT-23-3 (TO-236)
Base Part Number:	MMBT2222

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MMBT2222LT1G Application Field and Working Principle

The MMBT2222LT1G is a single bipolar junction transistor (BJT) device. It is also sometimes referred to as a field-effect transistor (FET). The MMBT2222LT1G is composed of two p-type and one n-type material to form three semiconductor areas. It has a power dissipation factor of up to 0.75W and a maximum collector current of up to 500mA. Its maximum voltage rating is 40V for collector-emitter, 25V for base-emitter, and 40V for collector-base.

Applications

The MMBT2222LT1G is used in a wide range of applications, including low-noise amplifiers, analog switches, linear circuits, and amplification and switching circuits. It is also used in analog and digital audio systems, voltage regulators, and signal conditioning. In addition, the device is frequently utilized in edge-turning circuits, high-frequency applications, and memory circuits.

Working Principle

The MMBT2222LT1G is an n-p-n type of BJT device. This means that the two areas of the three-semiconductor region are made up of p-type material and one n-type material. This arrangement of materials allows for the device to function as a current-controlled switch. With its internal structure, the MMBT2222LT1G can produce a signal amplification when current is supplied to the base of the device.The voltage input signal is applied to the device\'s base in order to control the current flow from the collector to the emitter. When the base voltage is positive from a voltage source, it causes a current that moves from the collector to the emitter. With the current\'s flow, the device amplifies the input signal. On the other hand, the collector to emitter current stops flowing when the negative voltage is applied to the base of the device. This stops the flow of current, which results in the device turning off the output voltage.In order to control the current flowing through the device, the MMBT2222LT1G has a base-emitter voltage that varies between 0.3 and 0.8V. If the base-emitter voltage is higher than 0.8V, it will not activate current flow, but if it is lower than 0.3V it will turn on the current flow. This allows for easier and more precise control of the output voltage.

Conclusion

The MMBT2222LT1G is a single bipolar junction transistor that is composed of two p-type and one n-type material. It is used in a wide range of applications including audio systems and edge-turning circuits. The device functions as a current-controlled switch and produces a signal amplification when the base voltage is positive from a voltage source. With its internal structure and base-emitter voltage between 0.3 and 0.8V, the MMBT2222LT1G can provide precision control of the output voltage.

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