
Allicdata Part #: | MMBT2907ALT1HTSA1TR-ND |
Manufacturer Part#: |
MMBT2907ALT1HTSA1 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | TRANS PNP 60V 0.6A SOT-23 |
More Detail: | Bipolar (BJT) Transistor PNP 60V 600mA 200MHz 330m... |
DataSheet: | ![]() |
Quantity: | 78000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Last Time Buy |
Transistor Type: | PNP |
Current - Collector (Ic) (Max): | 600mA |
Voltage - Collector Emitter Breakdown (Max): | 60V |
Vce Saturation (Max) @ Ib, Ic: | 1.6V @ 50mA, 500mA |
Current - Collector Cutoff (Max): | 10nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 100 @ 150mA, 10V |
Power - Max: | 330mW |
Frequency - Transition: | 200MHz |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | TO-236-3, SC-59, SOT-23-3 |
Supplier Device Package: | SOT-23-3 |
Base Part Number: | MMBT2907 |
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The MMBT2907ALT1HTSA1 is a single PNP, Silicon Epitaxial Planar Transistor. It is typically used in small signal applications, such as radio-frequency cathode and are mainly used as amplifiers, oscillators, cutoffs and switches.
The properties of the MMBT2907ALT1HTSA1 make it suitable for a wide variety of applications. It has a collector-emitter voltage of 60 V, a collector current of 500 mA, and a power dissipation of 600 mW. It features a combination of high voltage, high current, low noise, high gain and low collector-base capacitance.
The MMBT2907ALT1HTSA1 has a PN junction, which is the basic structure of a transistor. This junction is made up of an N-type semiconductor material and a P-type semiconductor material, which are sandwiched together. Electrons flow from the N-type material to the P-type material, creating a current. This current is controlled by the voltage applied to the PN junction.
The working principle of the MMBT2907ALT1HTSA1 is based on the electronics principle known as the “alpha” control. The alpha-control technique is based on the operation of two transistors within a single package. The transistors are connected in a common-emitter configuration and the current flowing through the transistor’s base-emitter junction is controlled by the alpha-control circuit. The current is controlled by adjusting the bias voltage applied to the junction. This current is then amplified and controlled by the alpha-control circuit.
The MMBT2907ALT1HTSA1 is widely used in electronic circuits, especially in circuits that require high-current capability and low noise. It can be used for audio amplifier circuits, for radio-frequency switching and for general signal amplification applications. It can also be used for switching high-power load applications, such as in UPS systems. It is also used in industrial control circuits and in consumer electronics.
The MMBT2907ALT1HTSA1 is a popular choice for a variety of applications due to its low noise and low power consumption. It is an efficient and reliable choice for circuits that require high voltage, high current and low noise. The transistor has proven to be reliable and durable in a wide range of temperatures and environmental conditions.
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