MMBT2907AWT1 Allicdata Electronics
Allicdata Part #:

MMBT2907AWT1OSCT-ND

Manufacturer Part#:

MMBT2907AWT1

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: TRANS PNP 60V 0.6A SOT323
More Detail: Bipolar (BJT) Transistor PNP 60V 600mA 200MHz 150m...
DataSheet: MMBT2907AWT1 datasheetMMBT2907AWT1 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Cut Tape (CT) 
Part Status: Obsolete
Transistor Type: PNP
Current - Collector (Ic) (Max): 600mA
Voltage - Collector Emitter Breakdown (Max): 60V
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max): --
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Power - Max: 150mW
Frequency - Transition: 200MHz
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Supplier Device Package: SC-70-3 (SOT323)
Base Part Number: MMBT2907A
Description

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The MMBT2907AWT1 is a small signal NPN transistor used in many types of consumer and industrial electronics. The transistor is classified as a single BJT (Bipolar Junction Transistor) and is used in many applications including amplifiers, switches, and voltage regulators. In this article, we will discuss the application field and working principle of the MMBT2907AWT1.The MMBT2907AWT1 is a low-power transistor designed to operate over a wide voltage range. It is suitable for use with low-voltage, low-current applications such as logic circuits, amplifiers, and audio systems. The device has a maximum current gain of 300 and a maximum voltage gain of 8, making it a versatile and reliable choice for a wide range of applicatoins.The MMBT2907AWT1 is constructed with a PNP emitter and a NPN collector. The emitter is used to inject minority carriers into the base region of the device and the collector is used to remove majority carriers. The base-emitter diode is forward-biased and acts as a current generator, while the base-collector diode is reverse-biased and acts as a current sink.The working principle of the MMBT2907AWT1 is based on what is known as the common-base configuration. The PNP emitter and NPN collector are connected to a voltage source and the base is connected to ground. When a current is applied to the base region, a voltage drop across the base-collector diode sets up a flow of minority carriers from the base to the collector. This current then multiplies the base current, resulting in a larger current gain.The MMBT2907AWT1 is used in a wide range of applications. It can be used as a switch in circuit designs, as an amplifier, or as an audio amplifier. It is also used as an input stage in logic circuits, such as logic gates and flip-flops. The device can also be used as an output stage in voltage regulators and can be used in voltage dividers.In summary, the MMBT2907AWT1 is a small signal NPN transistor used in many types of consumer and industrial electronics. It is classified as a single BJT (Bipolar Junction Transistor) and is used in many applications including amplifiers, switches, and voltage regulators. The device is constructed with a PNP emitter and a NPN collector and uses a common-base configuration to achieve a current gain of up to 300. The MMBT2907AWT1 is suitable for use in low-voltage, low-current applications and is also used as a switch, an amplifier , and an audio amplifier.

The specific data is subject to PDF, and the above content is for reference

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