MMBT3904T Allicdata Electronics
Allicdata Part #:

MMBT3904TTR-ND

Manufacturer Part#:

MMBT3904T

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: TRANS NPN 40V 0.2A SOT-523F
More Detail: Bipolar (BJT) Transistor NPN 40V 200mA 300MHz 250m...
DataSheet: MMBT3904T datasheetMMBT3904T Datasheet/PDF
Quantity: 24000
Stock 24000Can Ship Immediately
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Transistor Type: NPN
Current - Collector (Ic) (Max): 200mA
Voltage - Collector Emitter Breakdown (Max): 40V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 50mA
Current - Collector Cutoff (Max): --
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V
Power - Max: 250mW
Frequency - Transition: 300MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-89, SOT-490
Supplier Device Package: SOT-523F
Base Part Number: MMBT3904
Description

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MMBT3904T is a general-purpose NPN low-power bipolar junction transistor (BJT) with a maximum collector-emitter voltage rating of 40V, a maximum collector-base voltage rating of 40V, a maximum emitter-base voltage rating of 5V, and a maximum collector current rating of 500mA. It is commonly used in switching circuits, amplifier circuits and driver circuits.

The working principle of an NPN BJT is based on the movement of both electrons and holes. When the base is at a negative voltage relative to the emitter, the electrons on the n-type material will move from the base to the emitter due to the electric field gradient. This creates a depletion region at the base-emitter junction and shuts off the transistor, blocking current flow from collector to emitter. Conversely, when the base is at a positive voltage relative to the emitter, the holes on the p-type material will move from the base to the emitter due to the electric field gradient. This creates an accumulation region at the base-emitter junction and allows current flow from collector to emitter.

The MMBT3904T is a general-purpose NPN low-power BJT that is commonly used in a variety of applications. It is commonly used in switching circuits because of its ability to handle relatively high voltage and current capabilities. It is also commonly used in amplifier circuits as it can amplify signals and in driver circuits as it can provide the necessary current and voltage to drive different components.

The MMBT3904T is ideal for lower power applications where its low-power rating suits its purpose well. Its 40V collector-emitter voltage rating and its 500mA collector current rating make it perfect for use in low-power circuits such as those found in low-voltage battery-powered devices.

The MMBT3904T is a versatile device and can be used in a variety of applications. Its NPN construction makes it perfect for use in low-power switching, amplifier and driver circuits. Its 40V collector-emitter voltage rating, its 500mA collector current rating, and its 5V emitter-base voltage rating make it suitable for use in a wide range of low-power applications.

The specific data is subject to PDF, and the above content is for reference

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