Allicdata Part #: | MMBT4126-FDITR-ND |
Manufacturer Part#: |
MMBT4126-7-F |
Price: | $ 0.02 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Diodes Incorporated |
Short Description: | TRANS PNP 25V 0.2A SMD SOT23-3 |
More Detail: | Bipolar (BJT) Transistor PNP 25V 200mA 250MHz 300m... |
DataSheet: | MMBT4126-7-F Datasheet/PDF |
Quantity: | 1000 |
3000 +: | $ 0.02121 |
6000 +: | $ 0.01913 |
15000 +: | $ 0.01663 |
30000 +: | $ 0.01497 |
75000 +: | $ 0.01331 |
150000 +: | $ 0.01106 |
Series: | Automotive, AEC-Q101 |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Transistor Type: | PNP |
Current - Collector (Ic) (Max): | 200mA |
Voltage - Collector Emitter Breakdown (Max): | 25V |
Vce Saturation (Max) @ Ib, Ic: | 400mV @ 5mA, 50mA |
Current - Collector Cutoff (Max): | 50nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 120 @ 2mA, 1V |
Power - Max: | 300mW |
Frequency - Transition: | 250MHz |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | TO-236-3, SC-59, SOT-23-3 |
Supplier Device Package: | SOT-23-3 |
Base Part Number: | MMBT4126 |
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MMBT4126-7-F is part of the 2N4126-7-F family of transistors that are both used for p-channel MOSFETs. In today’s electronics market, transistors are a key component in the majority of switched mode power supplies as well as amplifiers. The MMBT4126-7-F is a high-performance device that provides a fast switching capability.
The MMBT4126-7-F is a single type NPN transistor. It is composed of three layers: the emitter, base, and collector. The emitter is connected to one end of the circuit and the collector is connected to the other end. When a voltage difference between the emitter and the collector is applied, the transistor switches allowing a current to flow between the two ends.
The MMBT4126-7-F has a wide range of applications. As a general purpose device, this transistor can be used for switching and amplifying audio signals. Additionally, due to its high speed switching time, it is popularly used in high-frequency applications such as radio transmitters and receivers, wireless communication, and radar systems.
The MMBT4126-7-F also has a high current gain (hfe), which is the ratio between its collector and emitter current. It can turn on or off quickly and efficiently, making it suitable for a variety of switching device applications. It is also capable of providing linear amplification in small signal amplification applications.
In terms of circuit design, the MMBT4126-7-F can be used as a power switch, voltage regulator, amplifier, or current switch. Because of its higher-powered operation, it is especially well-suited for power amplifier and other high power applications. It can be used to replace single transistors or used as an array of several devices to create multiple level amplification.
In addition to its wide range of applications, the MMBT4126-7-F also has an impressive list of features. It is designed for low power dissipation and features o.I.T.C high voltage transistors. Additionally, it is RoHS-compliant and contains a built-in EZ diode that helps protect the device from over-current and over-voltage conditions.
In conclusion, the MMBT4126-7-F is a single type NPN transistor that is perfect for a wide range of applications. It is a fast switching device with a high current gain that can be used in switching, voltage regulation, and small signal amplification. Additionally, it is RoHS-compliant and can be used as an array of devices for multi-level amplification.
The specific data is subject to PDF, and the above content is for reference
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