MMBT4401LT1G Allicdata Electronics

MMBT4401LT1G Discrete Semiconductor Products

Allicdata Part #:

MMBT4401LT1GOSTR-ND

Manufacturer Part#:

MMBT4401LT1G

Price: $ 0.10
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: TRANS NPN 40V 0.6A SOT23Bipolar (BJT) Transistor N...
More Detail: N/A
DataSheet: MMBT4401LT1G datasheetMMBT4401LT1G Datasheet/PDF
Quantity: 25887
1 +: $ 0.10000
10 +: $ 0.04000
100 +: $ 0.03000
1000 +: $ 0.01500
10000 +: $ 0.00900
Stock 25887Can Ship Immediately
$ 0.1
Specifications
Series: MMBT4401L
Packaging: Tape & Reel (TR) 
FET Type: --
Part Status: Active
Technology: Si
Transistor Type: NPN
Drain to Source Voltage (Vdss): --
Current - Collector (Ic) (Max): 600mA
Current - Continuous Drain (Id) @ 25°C: --
Voltage - Collector Emitter Breakdown (Max): 40V
Drive Voltage (Max Rds On, Min Rds On): --
Vce Saturation (Max) @ Ib, Ic: 750mV @ 50mA, 500mA
Rds On (Max) @ Id, Vgs: --
Current - Collector Cutoff (Max): --
Vgs(th) (Max) @ Id: --
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 1V
Gate Charge (Qg) (Max) @ Vgs: --
Power - Max: 300mW
Vgs (Max): --
Frequency - Transition: 250MHz
Input Capacitance (Ciss) (Max) @ Vds: --
Operating Temperature: -55°C ~ 150°C (TJ)
FET Feature: --
Mounting Type: Surface Mount
Power Dissipation (Max): --
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23-3 (TO-236)
Base Part Number: MMBT4401
Description

Due to market price fluctuations,if you need to purchase or consult the price.You can contact us or emial to us:   sales@allicdata.com


1. Description

This NPN MMBT4401LT1G general purpose bipolar junction transistor from ON Semiconductor is perfect for a circuit requiring high-current density and can operate in a high voltage range. This bipolar junction transistor's maximum emitter base voltage is 6 V. Its maximum power dissipation is 300 mW. Tape and reel packaging will encase this product during shipment, in order to ensure safe delivery and enable quick mounting of components. It has a maximum collector emitter voltage of 40 V and a maximum emitter base voltage of 6 V. This bipolar junction transistor has an operating temperature range of -55 °C to 150 °C.

2. Features

    1. S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable

    2. These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant

3. SWITCHING TIME EQUIVALENT TEST CIRCUITS

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            Turn−On Time                                                          Turn−Off Time

4. PACKAGE DIMENSIONS

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