MMBT4401T-7-F Allicdata Electronics
Allicdata Part #:

MMBT4401T-FDITR-ND

Manufacturer Part#:

MMBT4401T-7-F

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Diodes Incorporated
Short Description: TRANS NPN 40V 0.6A SOT-523
More Detail: Bipolar (BJT) Transistor NPN 40V 600mA 250MHz 150m...
DataSheet: MMBT4401T-7-F datasheetMMBT4401T-7-F Datasheet/PDF
Quantity: 21000
Stock 21000Can Ship Immediately
Specifications
Series: Automotive, AEC-Q101
Packaging: Tape & Reel (TR) 
Part Status: Active
Transistor Type: NPN
Current - Collector (Ic) (Max): 600mA
Voltage - Collector Emitter Breakdown (Max): 40V
Vce Saturation (Max) @ Ib, Ic: 750mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 1V
Power - Max: 150mW
Frequency - Transition: 250MHz
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-523
Supplier Device Package: SOT-523
Base Part Number: MMBT4401
Description

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Introduction
MMBT4401T-7-F is a bipolar junction transistor (BJT) specifically designed for use in circuits that require a high degree of reliability. It is a PNP type and is mounted in a TO-220AB package. The transistor is mainly used in automotive, appliance, and telecom equipment.
Application Field
MMBT4401T-7-F are most commonly used in applications where reliability is a major concern, such as automotive, appliance, and telecom equipment. It can be used for various applications such as switching and switching stages, commercial amplification, and audio amplifier circuits.The device can also be used in general-purpose switching, analog circuits, current-source amplifiers and switching circuits. It offers excellent thermal stability, improved transient performance, better speed than other BJTs, and excellent reliability characteristics.
Working Principle
The PNP type of MMBT4401T-7-F works according to the base-collector-emitter configuration and uses a small current in the base to control a larger current in the collector-emitter junction. The voltage applied to the base controls the resistance between the collector and emitter and the current within them.In PNP transistors, the collector is connected to the positive side of the voltage source, while the emitter is connected to the negative side of the voltage source. When the base is switched on, a current will flow through it, turning it “on” and allowing current to flow from the collector to the emitter. When the base is switched off, the transistor is “off” and no current will flow from the collector to the emitter.
Conclusion
MMBT4401T-7-F is a PNP type bipolar junction transistor that is mainly used in applications that require a high degree of reliability. It has excellent thermal stability, improved transient performance, better speed than other BJTs and excellent reliability characteristics. It works according to the base-collector-emitter configuration and uses a small current in the base to control a larger current in the collector-emitter junction.

The specific data is subject to PDF, and the above content is for reference

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