MMBT4403WT1G

Series:	--
Packaging:	Tape & Reel (TR)
Part Status:	Active
Transistor Type:	PNP
Current - Collector (Ic) (Max):	600mA
Voltage - Collector Emitter Breakdown (Max):	40V
Vce Saturation (Max) @ Ib, Ic:	750mV @ 50mA, 500mA
Current - Collector Cutoff (Max):	--
DC Current Gain (hFE) (Min) @ Ic, Vce:	100 @ 150mA, 2V
Power - Max:	150mW
Frequency - Transition:	200MHz
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Surface Mount
Package / Case:	SC-70, SOT-323
Supplier Device Package:	SC-70-3 (SOT323)
Base Part Number:	MMBT4403

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Introduction

MMBT4403WT1G is a PNP silicon Bipolar Junction Transistor (BJT) offered by ON Semiconductor. It is one of the most popular general-purpose bipolar junction transistors in production. It features active protection against reverse current, high current gain and low noise. This makes it ideal for a wide variety of applications, from low voltage and low power motor drive circuits to audio pre-amplifiers and digital integrated circuits.

Application Field

The MMBT4403WT1G is mainly used in amplifier, switch and general-purpose applications. It can be used as a switch in printer interfaces, where it can open and close the circuit to control the mechanical movement of the printhead. It can also be used as an amplifier in power supplies to control the voltage, or in audio amplifiers to increase the output power. Additionally, it can be used as a general-purpose amplifier in many other audio and video applications. The MMBT4403WT1G is also used in low voltage and low power motor drive circuits, allowing the motor to be switched on or off depending on the given input signals.

Working Principle

The MMBT4403WT1G is a PNP silicon Bipolar junction transistor, with three terminals: the base (B), the collector (C) and the emitter (E). It consists of two P-doped and one N-doped semiconductor regions. The B-C junction is a forward-biased diode, while the B-E junction is reverse-biased. When a current is applied to the base, electrons are injected from the base into the collector, creating a conductive channel between the B and C terminals, allowing current to flow from C to E.The amount of current flow between C and E is determined by the base current, which controls the width of the channel. The gain, or current amplification factor, of the transistor is determined by the ratio of collector current to the base current. The gain is also affected by the collector-to-emitter voltage.

Conclusion

The MMBT4403WT1G is a popular PNP silicon Bipolar Junction Transistor (BJT) used in a variety of applications, including switches, amplifiers and general-purpose circuits. This device operates on a simple working principle, with a P-doped and N-doped semiconductor regions and three terminals (base, collector and emitter). The base current controls the amount of current flow between C and E, while the gain of the transistor is determined by the collector current and collector-to-emitter voltage.

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