Allicdata Part #: | MMBT5088LT1OSCT-ND |
Manufacturer Part#: |
MMBT5088LT1 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | TRANS NPN 30V 0.05A SOT23 |
More Detail: | Bipolar (BJT) Transistor NPN 30V 50mA 50MHz 300mW ... |
DataSheet: | MMBT5088LT1 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Cut Tape (CT) |
Part Status: | Obsolete |
Transistor Type: | NPN |
Current - Collector (Ic) (Max): | 50mA |
Voltage - Collector Emitter Breakdown (Max): | 30V |
Vce Saturation (Max) @ Ib, Ic: | 500mV @ 1mA, 10mA |
Current - Collector Cutoff (Max): | 50nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 300 @ 100µA, 5V |
Power - Max: | 300mW |
Frequency - Transition: | 50MHz |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | TO-236-3, SC-59, SOT-23-3 |
Supplier Device Package: | SOT-23-3 (TO-236) |
Base Part Number: | MMBT5088 |
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The MMBT5088LT1 is a NPN general-purpose bipolar junction transistor (BJT) commonly used in analog and linear applications. It is an NPN device with an ultra-low voltage output of 50V and a max collector current of 200mA. The transistor has a excellent power dissipation capability and can be used in a wide variety of voltage and current applications such as audio amplifiers, small-signal switches, voltage regulators and motor drivers. The MMBT5088LT1 offers excellent speed performance and is commonly used in high-frequency applications.
The MMBT5088LT1 is a small discrete NPN BJT that is constructed of three layers of semiconductor material, an emitter, a base and a collector. The device is formed by sandwiching a thin layer of p-type material between two n-type layers. The emitter and the collector are heavily doped to ensure the best performance. The base is lightly doped and serves as the control region thus allowing a small current flow to be controlled by a larger current. When a small forward current is applied to the junction, electrons form the emitter are accelerated by the electric field and are attracted to the collector. This is referred to as a ‘thermal avalanche’.
The MMBT5088LT1 operates in several different modes depending on the amount of current passing through it and the amount of voltage applied to the base-emitter junction. When the amount of base current is low (in the region called the active region), the transistor acts as an amplifier, responding to increases or decreases in the base current with a corresponding increase or decrease in the collector current. This is useful for linear applications, such as voltage regulator circuits. When the base current is high enough, the transistor becomes saturated and acts as a switch, allowing no or a minimum amount of collector current to be brought in. This useful in digital and switching applications.
In conclusion, the MMBT5088LT1 is a versatile NPN transistor capable of performing in a wide variety of analog and linear applications. It is capable of amplifying small signals and switching high currents, making it a popular choice among engineers. It has excellent power dissipation capabilities and is a great choice for high-frequency applications.
The specific data is subject to PDF, and the above content is for reference
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