MMBT5401LT3

Series:	--
Packaging:	Tape & Reel (TR)
Part Status:	Obsolete
Transistor Type:	PNP
Current - Collector (Ic) (Max):	500mA
Voltage - Collector Emitter Breakdown (Max):	150V
Vce Saturation (Max) @ Ib, Ic:	500mV @ 5mA, 50mA
Current - Collector Cutoff (Max):	50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:	60 @ 10mA, 5V
Power - Max:	300mW
Frequency - Transition:	300MHz
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Surface Mount
Package / Case:	TO-236-3, SC-59, SOT-23-3
Supplier Device Package:	SOT-23-3 (TO-236)
Base Part Number:	MMBT5401

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Introduction

MMBT5401LT3 is a NPN transistor which belongs the field of transistors- Bipolar (BJT) –single. It is mainly used for general purpose amplifier and switching applications. It is mainly characterized by high gain with logic level onset type triggering capability while maintaining low power consumption. This NPN transistor has a range of applications spanning from industrial and consumer products to biomedical electronics. This article aims to discuss the application field and the working principle of this particular NPN transistor.

Application Field

MMBT5401LT3, being a low power, general purpose NPN transistor, is suitable for use in a wide range of applications. These include industrial and consumer electronics, automotive, telecom and computer control applications. This type of transistor is also used for motion control and surveillance, audio amplifiers, medical imaging and sensing. In particular, it is ideal for switching and amplification circuits as it has high gain and low power consumption features. In addition, MMBT5401LT3 is suitable in portable electronic devices due to its low power consumption capabilities. The transistor is capable of operating up to 300MHz in circuits, thus making it an ideal choice for designers looking to increase the operational frequency of their circuits. It is also an ideal choice for circuits requiring high speed and precision, such as in the automotive and telecom industries, due to its high gain.

Working Principle

MMBT5401LT3 is an NPN transistor, thus, its working principle is based on the movement of electrons from the emitter to the collector. When the voltage applied to the base of the transistor is of a certain magnitude, electrons in the base-emitter junction will be drawn to the base region (forming a negative gate) and electrons in the collector region will be attracted to the emitter, thus creating a circuit in the transistor. The size of the voltage required to trigger this flow of electrons is known as the base voltage or threshold voltage, and is an important parameter in an NPN transistor. The larger the base voltage, the higher the current passing through the transistor and the higher the voltage drop across the collector-emitter terminals.

Conclusion

MMBT5401LT3 is a low power, general purpose NPN transistor, suitable for a wide range of applications in industrial, consumer, automotive and medical electronics. Its main features are its high gain and low power consumption and it can operate up to 300MHz in circuits. Its working principle is based on the movement of electrons from the emitter to the collector and the larger the base voltage, the higher the current passing through the transistor and the higher the voltage drop across the collector-emitter terminals.

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