MMBT6429LT1

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

Discrete transistors, especially single ones, are vital components for circuitry and reliability. The MMBT6429LT1 is one of them, a small signal NPN bipolar junction transistor.

Device Features

The MMBT6429LT1 has many important features. First of all, the collector-emitter voltage ranges from 30 V to 40 V. This ensures that it can be used in a wide variety of applications. The power dissipation is 200 mW, which is more than enough for small signal control. The transition frequency is also quite high, with a maximum of 600 MHz. This allows for fast switching speeds, making it well-suited for high speed switching applications. Finally, the linear current gain is quite good, ranging from 120 to 350.

Common Applications

The MMBT6429LT1 is most commonly used in amplifiers and signal switching circuits. With its high power dissipation and high linear current gain, it excels at both amplifying small signals and quickly switching them on and off. This makes it ideal for low-power application where fast response times are required, such as in audio amplifiers, LEDs, and timing circuits. It can also be used in other more esoteric applications, such as in oscillators, video amplifiers, and analog to digital converters.

Working Principle

At the heart of all transistors is the same principle. A three-layer semiconductor material, known as a "junction," is sandwiched between a source (the emitter for an NPN transistor) and a drain (the collector for an NPN transistor). A bias voltage is then applied, allowing current to flow from the source to the drain. The amount of current that can flow is determined by the amount of bias voltage, as well as the resistance of the junction. In the case of the MMBT6429LT1, this resistance is relatively low, allowing it to be used in high speed applications.

In addition, the MMBT6429LT1 also has a base connection. This connection is used to control the amount of current that can flow between the source and the drain. By adjusting the voltage on the base connection, the resistance of the junction can be changed, thus controlling the amount of current that can flow.

Conclusion

The MMBT6429LT1 is a small signal NPN bipolar junction transistor. It has many important features, including an operating voltage range of 30 V to 40 V, a high power dissipation of 200 mW, and a linear current gain of 120 to 350. This makes it suitable for a wide variety of applications, including amplifiers, signal switching circuits, LEDs, oscillators, and analog to digital converters. Understanding the working principle of transistors is also important, as it will allow one to control the amount of current that can flow through the device.

The specific data is subject to PDF, and the above content is for reference