MMBT6517LT1G Discrete Semiconductor Products

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The MMBT6517LT1G is a single, general-purpose PNP Bipolar Transistor commonly used in a variety of electronic circuit applications. The transistor has a maximum collector current of 500 mA and a minimum rating of often referred to as its power dissipation, at 1.5 W. It has a maximum collector-base voltage of 300V and a maximum collector-emitter voltage of 80V. The transistor can also handle maximum power dissipation at the package of 630 mW, with a maximum temperature of 150C. In terms of its power rating, the short-term maximum power dissipation is 40mW at 25C and 300mW at 70C.

Due to its widespread availability and affordability, the MMBT6517LT1G is especially useful for prototyping and Bread-boarding. Its general purpose application field can be used in power supplies and pre-amplifiers, making it a useful small-signal device for low-voltage solutions. The transistor can also be used in a variety of other circuits, including linear active biasing and audio amplifiers. The amplification factor at full capacity is relatively standard, at around 300.

When discussing the working principle of the transistor, it must be first noted that a bipolar transistor is composed of three terminals known as the collector, the base and the emitter. These three terminals are the input, control and output elements of the transistor. In its off-state, the transistor behaves as an open-circuit because the base emitter junction is reverse biased and no current flows between the collector and emitter. This results in the transistor being unable to conduct current between its collector and emitter.

Thus, in order to activate the transistor, a forward bias is required on the base-emitter junction by the application of a positive voltage on the base. This forward bias creates a much larger electric field which allows current to flow from the collector to the emitter. This is known as the transistor\'s forward bias or on-state and causes the transistor to act as a closed switch. The transistor then amplifies the input signals applied to the base with an output signal applied to the collector.

The amount of gain produced is essentially determined by the amount of current flowing through the collector. To control the amount of gain, the current must be controlled by varying the input signal value. The current gain, which is known as the transistor\'s Beta value, is mainly the ratio between the collector current and the base current. This Beta value will determine the ideal amplification of the transistor.

The MMBT6517LT1G transistor is also equipped with a protected diode which allows it to be more tolerant to high voltages and as such, can be used to protect circuits from overvoltage transients. The protected diode prevents large peak voltages which can cause damage to the transistors and other components in the circuit. This transistors is also available with a maximum collector current of 500 mA and a power dissipation of 1.5 W.

In summary, the MMBT6517LT1G is a single, general purpose PNP bipolar transistor commonly used in a variety of electronic circuits. Its maximum collector-base voltage is 300V and its maximum collector-emitter voltage is 80V. It has a maximum power rating of 1.5W at 25C and a maximum power dissipation at the package of 630mW with a maximum temperature rating of 150C. The transistors is often used for prototyping and Bread-boarding, as well as in pre-amplifiers, power supplies and linear active biasing. The transistor also has a protected diode which helps to protect the circuit from overvoltage transients.

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