MMBT6589T1G Allicdata Electronics
Allicdata Part #:

MMBT6589T1G-ND

Manufacturer Part#:

MMBT6589T1G

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: TRANS PNP 30V 1A TSOP-6
More Detail: Bipolar (BJT) Transistor PNP 30V 1A 100MHz 540mW S...
DataSheet: MMBT6589T1G datasheetMMBT6589T1G Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Obsolete
Transistor Type: PNP
Current - Collector (Ic) (Max): 1A
Voltage - Collector Emitter Breakdown (Max): 30V
Vce Saturation (Max) @ Ib, Ic: 650mV @ 200mA, 2A
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 500mA, 2V
Power - Max: 540mW
Frequency - Transition: 100MHz
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6
Supplier Device Package: 6-TSOP
Description

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MMBT6589T1G is a NPN transistor in a small SOT-23 package from General Micro Systems, Inc. It is a type of bipolar transistors, also known as bipolar junction transistors (BJT). It is a single package terminal device, which means that the three leads, if available, are connected to each other with no wires or other connection.

MMBT6589T1G has a variety of uses and is ideal for applications where high speed and low power dissipation are needed, such as switching and amplification circuits. It is also used in digital logic, audio frequency amplifiers, current limiting, and even as an oscillator in some cases.

MMBT6589T1G transistors work by creating two betas of current, NPN (negative-positive-negative) and PNP (positive-negative-positive). These two types of transistors are combined together to form a single package terminal. NPN transistors have a current flow from the emitter to the collector, while PNP transistors have a current flow from the collector to the emitter. The emitter is the terminal with the most power, while the collector is the terminal with the least power. The base of the transistor controls the amount of current that flows between the collector and emitter terminal, thereby controlling the voltage and current gain.

The MMBT6589T1G is also able to work in higher voltage applications, which is great for devices that run on a high voltage supply. Furthermore, it is capable of withstanding a high amount of shock without any damage thanks to its good thermal stability and high breakdown voltage. Additionally, it is easy to install and can be used in a wide range of temperatures.

When using the MMBT6589T1G, it is important to note that it has very low input and high output impedance. This means that when the input voltage at the base is increased, the output voltage at the collector is also increased. As such, it is important to adjust the base voltage as needed in order to achieve the desired results.

Overall, the MMBT6589T1G is an useful and versatile device, capable of withstanding a high amount of shock and providing high performance in a wide range of applications. It is a popular choice for many applications, such as digital logic, audio frequency amplifiers, and current limiting. Furthermore, its ability to withstand high voltages makes it suitable for high power applications. With its ease of installation and wide range of temperatures, the MMBT6589T1G is definitely a cost-effective solution for many applications.

The specific data is subject to PDF, and the above content is for reference

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