MMBTA05-TP Allicdata Electronics
Allicdata Part #:

MMBTA05TPMSTR-ND

Manufacturer Part#:

MMBTA05-TP

Price: $ 0.09
Product Category:

Discrete Semiconductor Products

Manufacturer: Micro Commercial Co
Short Description: TRANS NPN 60V 0.5A SOT23
More Detail: Bipolar (BJT) Transistor NPN 60V 500mA 100MHz 300m...
DataSheet: MMBTA05-TP datasheetMMBTA05-TP Datasheet/PDF
Quantity: 33000
3000 +: $ 0.08379
6000 +: $ 0.07871
15000 +: $ 0.07363
30000 +: $ 0.06771
Stock 33000Can Ship Immediately
$ 0.09
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Transistor Type: NPN
Current - Collector (Ic) (Max): 500mA
Voltage - Collector Emitter Breakdown (Max): 60V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 1V
Power - Max: 300mW
Frequency - Transition: 100MHz
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23
Base Part Number: MMBTA0*
Description

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The MMBTA05-TP is a single bipolar junction transistor (BJT) used in a variety of applications. It is a NPN type transistor with a 300V collector voltage rating, 1A collector current rating, and a 625mW power dissipation rating. It is typically used as an amplifier or switch in audio applications. It is also used in amplifier circuits, signal processing, circuit-signal isolation, and voltage-level conversion.

The MMBTA05-TP transistor is made up of three main elements: the emitter, the base, and the collector. It operates by allowing electric current to flow between the emitter and collector when there is a forward biasing of the base-emitter junction. In this state, the PN junction created by the overlapping N and P type semiconductor regions of the transistor allows electrons from the N region to flow easily into the P region.

When the base-emitter junction is reverse biased the current flow between the base and emitter is blocked allowing the transistor to be used as an open or closed switch. When the transistor is switched to open, also known as a cutoff state, the collector base junction becomes reverse biased and there is no current flow through the transistor. The cutoff state can also be achieved by keeping the current very low. When the transistor is switched to closed, also known as the saturation state, the collector-base junction becomes forward biased and the current flows freely through the transistor.

The MMBTA05-TP transistor is usually used in circuits as a current switch in order to control the flow of current in a circuit. It is often used as an on/off switch to control the power supply to a load as well as to control electric motors, valves, and other electronic devices. It can also be used in audio and other signal processing applications as an amplifier, such as in radio and television receivers. The transistor is also used in circuit-signal isolation, such as in telephone and computer networks, for voltage-level conversion.

One of the main advantages of the MMBTA05-TP transistor is its low power dissipation rating. This allows it to be used in low power applications where the power draw and heat dissipation need to be kept to a minimum. The transistor is also small in size and easy to mount in a circuit. It requires very little energy to operate, making it an ideal choice for energy-efficient designs.

The MMBTA05-TP transistor is a highly reliable and versatile device. It can be used in a variety of applications and its low power dissipation makes it a good choice for low-power and energy-efficient designs. It is a reliable option for amplifying and switching signals, as well as for circuit-signal isolation and voltage-level conversion.

The specific data is subject to PDF, and the above content is for reference

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