MMBTA05LT3 Allicdata Electronics
Allicdata Part #:

MMBTA05LT3-ND

Manufacturer Part#:

MMBTA05LT3

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: TRANS NPN 60V 0.5A SOT-23
More Detail: Bipolar (BJT) Transistor NPN 60V 500mA 100MHz 225m...
DataSheet: MMBTA05LT3 datasheetMMBTA05LT3 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Obsolete
Transistor Type: NPN
Current - Collector (Ic) (Max): 500mA
Voltage - Collector Emitter Breakdown (Max): 60V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 1V
Power - Max: 225mW
Frequency - Transition: 100MHz
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23-3 (TO-236)
Base Part Number: MMBTA05
Description

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Introduction

The MMBTA05LT3 is a single bipolar junction transistor (BJT) in a TO-92 package. It offers excellent switching performance with low-voltage operation, making it suitable for a wide range of applications. This article will explore its features, application fields, and working principle.

Features

The MMBTA05LT3 is a small-signal PNP transistor that is designed for use in general-purpose switching and amplifying due to its relatively low power, high gain, high-frequency operation, and low noise. It has a maximum collector current of 100 mA, as well as a maximum collector-emitter voltage of 30 V. In addition, it has a collector-emitter saturation voltage of 0.5 V, a maximum frequency of 100 MHz, and a power dissipation rating of 625 mW.

Applications

The MMBTA05LT3 is used in a variety of applications, including metering, lighting control, automotive controls, industrial controllers, alarms, and data acquisition. It is particularly well suited to applications that require a low-power, low-noise BJT transistor with high performance, such as amplifier circuits and small-signal switching circuits. Additionally, the MMBTA05LT3 can be used as a driver for some low-power logic and digital circuits.

Working Principle

The MMBTA05LT3 is a PNP type of BJT. It consists of two P-type base and two N-type collector/emitter regions that are separated from one another by the base region. When a voltage is applied to the base of the device, electrons will flow from the emitter to the collector, producing a current flow. As the current flows, the base-emitter junction is forward-biased, allowing for greater current flow. This current flow is then amplified by the collector-emitter junction, producing an amplified signal. This is the main principle of operation of the MMBTA05LT3.

Conclusion

The MMBTA05LT3 is a single bipolar junction transistor (BJT) in a TO-92 package. It offers excellent switching performance with low-voltage operation, making it suitable for a wide range of applications. Due to its relatively low power, high gain, high-frequency operation, and low noise, it is commonly used in metering, lighting control, automotive controls, industrial controllers, alarms, and data acquisition. Additionally, it can be used as a driver for some low-power logic and digital circuits. The MMBTA05LT3 is a PNP type of BJT and it works by allowing electrons to flow from the emitter to the collector due to a voltage applied to the base, producing an amplified signal.

The specific data is subject to PDF, and the above content is for reference

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