Allicdata Part #: | MMBTA05LT3-ND |
Manufacturer Part#: |
MMBTA05LT3 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | TRANS NPN 60V 0.5A SOT-23 |
More Detail: | Bipolar (BJT) Transistor NPN 60V 500mA 100MHz 225m... |
DataSheet: | MMBTA05LT3 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
Transistor Type: | NPN |
Current - Collector (Ic) (Max): | 500mA |
Voltage - Collector Emitter Breakdown (Max): | 60V |
Vce Saturation (Max) @ Ib, Ic: | 250mV @ 10mA, 100mA |
Current - Collector Cutoff (Max): | 100nA |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 100 @ 100mA, 1V |
Power - Max: | 225mW |
Frequency - Transition: | 100MHz |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | TO-236-3, SC-59, SOT-23-3 |
Supplier Device Package: | SOT-23-3 (TO-236) |
Base Part Number: | MMBTA05 |
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Introduction
The MMBTA05LT3 is a single bipolar junction transistor (BJT) in a TO-92 package. It offers excellent switching performance with low-voltage operation, making it suitable for a wide range of applications. This article will explore its features, application fields, and working principle.
Features
The MMBTA05LT3 is a small-signal PNP transistor that is designed for use in general-purpose switching and amplifying due to its relatively low power, high gain, high-frequency operation, and low noise. It has a maximum collector current of 100 mA, as well as a maximum collector-emitter voltage of 30 V. In addition, it has a collector-emitter saturation voltage of 0.5 V, a maximum frequency of 100 MHz, and a power dissipation rating of 625 mW.
Applications
The MMBTA05LT3 is used in a variety of applications, including metering, lighting control, automotive controls, industrial controllers, alarms, and data acquisition. It is particularly well suited to applications that require a low-power, low-noise BJT transistor with high performance, such as amplifier circuits and small-signal switching circuits. Additionally, the MMBTA05LT3 can be used as a driver for some low-power logic and digital circuits.
Working Principle
The MMBTA05LT3 is a PNP type of BJT. It consists of two P-type base and two N-type collector/emitter regions that are separated from one another by the base region. When a voltage is applied to the base of the device, electrons will flow from the emitter to the collector, producing a current flow. As the current flows, the base-emitter junction is forward-biased, allowing for greater current flow. This current flow is then amplified by the collector-emitter junction, producing an amplified signal. This is the main principle of operation of the MMBTA05LT3.
Conclusion
The MMBTA05LT3 is a single bipolar junction transistor (BJT) in a TO-92 package. It offers excellent switching performance with low-voltage operation, making it suitable for a wide range of applications. Due to its relatively low power, high gain, high-frequency operation, and low noise, it is commonly used in metering, lighting control, automotive controls, industrial controllers, alarms, and data acquisition. Additionally, it can be used as a driver for some low-power logic and digital circuits. The MMBTA05LT3 is a PNP type of BJT and it works by allowing electrons to flow from the emitter to the collector due to a voltage applied to the base, producing an amplified signal.
The specific data is subject to PDF, and the above content is for reference
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