MMBTA06-TP Allicdata Electronics
Allicdata Part #:

MMBTA06TPMSTR-ND

Manufacturer Part#:

MMBTA06-TP

Price: $ 0.03
Product Category:

Discrete Semiconductor Products

Manufacturer: Micro Commercial Co
Short Description: TRANS NPN 80V 0.5A SOT23
More Detail: Bipolar (BJT) Transistor NPN 80V 500mA 100MHz 300m...
DataSheet: MMBTA06-TP datasheetMMBTA06-TP Datasheet/PDF
Quantity: 48000
3000 +: $ 0.02282
6000 +: $ 0.01985
15000 +: $ 0.01687
30000 +: $ 0.01588
75000 +: $ 0.01489
150000 +: $ 0.01323
Stock 48000Can Ship Immediately
$ 0.03
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Transistor Type: NPN
Current - Collector (Ic) (Max): 500mA
Voltage - Collector Emitter Breakdown (Max): 80V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 1V
Power - Max: 300mW
Frequency - Transition: 100MHz
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23
Base Part Number: MMBTA0*
Description

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The MMBTA06-TP is a single bipolar junction transistor (BJT) with excellent switching and amplification characteristics. It is a PNP medium power transistors in a SOT-223 plastic package which is designed for use in high frequency switching applications in a wide range of industries. The MMBTA06-TP has a high Current Gain (hFE) and is suitable for use in power switching circuits, power amplifiers, and in linear drivers.

The MMBTA06-TP has the following characteristics:

  • · Voltage breakdown between collector and emitter: 145V
  • · Drain current: 650 mA
  • · Current Gain (hFE): 15-80
  • · Operating temperature range: -40℃ to +150℃
  • · Package: SOT-223-4

The MMBTA06-TP is specifically designed for use in high frequency switching applications with excellent switching and current gain characteristics. The transistor can be used in a wide range of industrial applications, such as power switching circuits, linear drivers, power amplifiers, and load switching.

The working principle of the MMBTA06-TP is based on the principle of bipolar junction transistor (BJT). The BJT consists of three layers of semiconductors, p-type, n-type, and p-type, connected in series. The BJT has three terminals: the base, collector and emitter. The base terminal is used to turn the device ‘on’ or ‘off’ by controlling the flow of current between the emitter and collector. When the base terminal is forward biased, current flows through the BJT, allowing the emitter and collector currents to flow. The collector current is much higher than the emitter current, the transistor is said to be in the ‘on’ state. When the base terminal is reverse biased, the flow of current through the transistor is significantly reduced, the transistor is said to be in the ‘off’ state.

The working of the MMBTA06-TP is based on the above principle. The collector and emitter voltages can be varied in order to control the flow of current through the device. The current gain (hFE) of the MMBTA06-TP can be adjusted by changing the base current. This makes the MMBTA06-TP ideal for use in power switching applications.

The MMBTA06-TP is a reliable and cost effective device with excellent switching and current gain characteristics. It can be used in a wide range of industrial applications, such as power switching circuits, linear drivers, power amplifiers, and load switching. The MMBTA06-TP is an ideal choice for high frequency switching applications in a wide range of industries.

The specific data is subject to PDF, and the above content is for reference

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