MMBTA13-TP Allicdata Electronics

MMBTA13-TP Discrete Semiconductor Products

Allicdata Part #:

1505-MMBTA13-TP-CHP

Manufacturer Part#:

MMBTA13-TP

Price: $ 0.01
Product Category:

Discrete Semiconductor Products

Manufacturer: Micro Commercial Co
Short Description: TRANS NPN DARL 30V 0.3A SOT23
More Detail: Bipolar (BJT) Transistor NPN - Darlington 30V 300m...
DataSheet: MMBTA13-TP datasheetMMBTA13-TP Datasheet/PDF
Quantity: 144000
3000 +: $ 0.01411
Stock 144000Can Ship Immediately
$ 0.01
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Transistor Type: NPN - Darlington
Current - Collector (Ic) (Max): 300mA
Voltage - Collector Emitter Breakdown (Max): 30V
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 100µA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 10000 @ 150mA, 1V
Power - Max: 225mW
Frequency - Transition: 125MHz
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23
Description

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MMBTA13-TP, which stands for Mini-MELF BTA13-TP Transistor, is a high-performance NPN (Negative-Positive-Negative) Silicon Bipolar All Diffused Transistor. It is designed to provide excellent transistor switching and amplifier linearity over wide temperature and voltage ranges. The transistor can be used in a variety of applications, including audio, low frequency oscillators, switching circuits, and low-noise amplifiers. This article will explore the application field and working principle of MMBTA13-TP.

Application Field

MMBTA13-TP is designed for many different applications and can be used for audio, low frequency oscillators, switching circuits, and low-noise amplifiers. Some specific applications of this transistor are as follows:

  • Audio: MMBTA13-TP is used in audio applications as a voltage amplifier and output driver. Its low bias current and low noise make it ideal for high-quality audio amplification.
  • Oscillators: MMBTA13-TP is often used as an oscillator in devices such as alarms and clocks. Its low power consumption and low noise make it suitable for use in these applications.
  • Switching Circuits: MMBTA13-TP can be used in switching circuits as an electronic switch. Its high-speed switching performance, low on-resistance, and low power usage make it ideal for switching circuits.
  • Low-Noise Amplifiers: MMBTA13-TP is also used in low-noise amplifiers due to its low noise and wide temperature range. This makes it ideal for high-fidelity audio applications.

Working Principle

MMBTA13-TP is a high-performance NPN (Negative-Positive-Negative) Silicon Bipolar All Diffused Transistor. It consists of three parts: the collector, base, and emitter. The collector is the terminal where electrons enter, the base is the control terminal, and the emitter is the terminal where electrons exit. When an electric current is applied to the base, it causes a proportionate amount of current to flow from the collector to the emitter.

The current flow from collector to emitter is determined by the ratio of the current being applied to the base to the resistance of the circuit. This ratio is known as the biasing ratio. When the base current is greater than the circuit\'s resistance, it causes transistor saturation, which increases the amount of current flowing from collector to emitter.

When the base current is less than the circuit\'s resistance, it causes transistor cutoff. This decreases the amount of current flowing from collector to emitter. The biasing ratio is important because it determines the collector-emitter current, which in turn affects the transistor\'s switching and amplifying performance.

Conclusion

MMBTA13-TP is a high-performance NPN Silicon Bipolar All Diffused Transistor designed for use in audio, low frequency oscillators, switching circuits, and low-noise amplifiers. It has excellent transistor switching and amplifier linearity over wide temperature and voltage ranges. The biasing ratio is important to determine the current flow from collector to emitter, which determines the transistor\'s switching and amplifying performance.

The specific data is subject to PDF, and the above content is for reference

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