MMBTA42-TP Allicdata Electronics
Allicdata Part #:

MMBTA42TPMSTR-ND

Manufacturer Part#:

MMBTA42-TP

Price: $ 0.03
Product Category:

Discrete Semiconductor Products

Manufacturer: Micro Commercial Co
Short Description: TRANS NPN 300V 0.3A SOT23
More Detail: Bipolar (BJT) Transistor NPN 300V 300mA 50MHz 300m...
DataSheet: MMBTA42-TP datasheetMMBTA42-TP Datasheet/PDF
Quantity: 6000
3000 +: $ 0.02282
6000 +: $ 0.01985
15000 +: $ 0.01687
30000 +: $ 0.01588
75000 +: $ 0.01489
150000 +: $ 0.01323
Stock 6000Can Ship Immediately
$ 0.03
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Transistor Type: NPN
Current - Collector (Ic) (Max): 300mA
Voltage - Collector Emitter Breakdown (Max): 300V
Vce Saturation (Max) @ Ib, Ic: 500mV @ 2mA, 20mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 30mA, 10V
Power - Max: 300mW
Frequency - Transition: 50MHz
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23
Base Part Number: MMBTA42
Description

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The MMBTA42-TP is a single bipolar junction transistor (BJT) suitable for use in a variety of applications. It is a silicon device that has a maximum collector-emitter voltage of 40 volts and a maximum collector current of 2 Amps. The MMBTA42-TP has a built-in base-emitter protection diode and its construction is designed for low-noise performance.

The basic function of bipolar junction transistors (BJTs) is to amplify electrical signals, but they can also be used for switching digital logic signals, voltage regulation, and other applications. The main parameters used to describe a BJT\'s characteristics are the collector-emitter voltage (VCE), the collector-emitter saturation voltage (VCE(sat)), the base-emitter voltage (VBE), the base current (IB), and the collector current (IC). A transitor\'s gain is determined by its current gain (hFE) which is a measure of the ratio of its collector current to its base current. The MMBTA42-TP has a range of current gains from 45 to 175.

The basic working principle of the MMBTA42-TP is the same as that of all bipolar junction transistors. It has three terminals: the base, the collector, and the emitter. When a small current is applied to the base terminal, it controls the larger current flowing between the collector and the emitter terminals. This flow of current is called the "transistor action" and is described by the term "current gain". When the base current is increased, the collector current also increases, and the collector-emitter voltage decreases. This is known as the "active region" of the transistor\'s operation. When the base current is decreased, the collector current also decreases, and the collector-emitter voltage increases. This is known as the "saturation region" of operation.

The MMBTA42-TP is suitable for a wide variety of applications including switching, amplifying, and voltage regulation. It can be used to amplify AC and DC signals. The device is frequently used in power supplies, switching circuits, and audio amplifiers. It can be used in both analog and digital circuits. Due to its low-noise performance and the protection diode, the MMBTA42-TP is an excellent choice for sensitive applications such as audio amplifiers and medical equipment.

In summary, the MMBTA42-TP is a single bipolar junction transistor (BJT) suitable for use in a variety of applications. It has a maximum collector-emitter voltage of 40 volts and a maximum collector current of 2 Amps. The device has a wide range of current gains and is suitable for both analog and digital circuits. It is an excellent choice for sensitive applications such as audio amplifiers and medical equipment due to its low-noise performance and protection diode.

The specific data is subject to PDF, and the above content is for reference

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