MMBTA56Q-7-F

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The MMBTA56Q-7-F transistor is a single bipolar junction transistor (BJT) commonly used in a variety of applications. It is often found in amplifier circuits, as well as high-frequency switching circuits and other low power applications. This article will discuss the features of the MMBTA56Q-7-F and its applications. It will also discuss the working principle of this device.

The MMBTA56Q-7-F is a NPN type BJT and has a total power dissipation of up to 625mW. It has an hFE gain range of 120 at 1mA and 350 at 10mA. This device also has a maximum voltages Collector-Base (VCB) of 45V, a maximum voltages Collector-Emitter (VCE) of 40V, and a maximum Emitter-Base (VEB) voltage of 5V. It has a current gain range of 120 at 1mA and 350 at 10mA. In addition, this device has a minimum frequency response of 10kHz and a maximum frequency response of 70kHz. These features make the MMBTA56Q-7-F an ideal choice for many different low power applications.

The MMBTA56Q-7-F can be found in a variety of low power applications. It is commonly used in amplifier circuits, high-frequency switching circuits, and logic circuits, where low power consumption is required. This device is also suitable for use in low frequency audio preamplifiers, amplifiers, impulse drivers and low power amplifiers. This device is also capable of producing high quality audio frequencies in applications such as CD players, radios and loudspeakers.

The working principle of MMBTA56Q-7-F is based on the transistor principle. This device is a three-terminal device, with the base terminal being the controlling element. When a small current is applied to the base, the flow of current between the collector and emitter terminals is increased or decreased. This changing of current flow is what allows the MMBTA56Q-7-F to be used in electronic circuits.

In conclusion, the MMBTA56Q-7-F is a single bipolar junction transistor (BJT) which offers a variety of features and can be found in a variety of low-power applications. It has a power dissipation of up to 625mW, an hFE gain range of 120-350 at 1mA-10mA, and a minimum frequency response of 10kHz. Its working principle is based on the transistor principle and its power can be adjusted through the base current.

The specific data is subject to PDF, and the above content is for reference