MMBTA64LT1 Allicdata Electronics
Allicdata Part #:

MMBTA64LT1OSCT-ND

Manufacturer Part#:

MMBTA64LT1

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: TRANS PNP DARL 30V 0.5A SOT23
More Detail: Bipolar (BJT) Transistor PNP - Darlington 30V 500m...
DataSheet: MMBTA64LT1 datasheetMMBTA64LT1 Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Series: --
Packaging: Cut Tape (CT) 
Part Status: Obsolete
Transistor Type: PNP - Darlington
Current - Collector (Ic) (Max): 500mA
Voltage - Collector Emitter Breakdown (Max): 30V
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 100µA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 20000 @ 100mA, 5V
Power - Max: 225mW
Frequency - Transition: 125MHz
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23-3 (TO-236)
Base Part Number: MMBTA64
Description

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Transistors are an essential component in any circuit or logic system, and as technology advances, transistors become more advanced and powerful. The MMBTA64LT1 is a single bipolar junction transistor (BJT) that is now widely used in many industrial, commercial, and residential applications. The MMBTA64LT1 transistor features excellent switching performance, ultra-low power consumption, low noise, and a wide operating temperature range.

The MMBTA64LT1 has various electronic characteristics, including current gain, voltage and power ratings, switching speeds, and thermal characteristics. The maximum collector current for the MMBTA64LT1 is 1.0A, and the maximum continuous collector current is 0.7A. The extreme temperature range is -55°C to +150°C and the storage temperature range is -55°C to +125°C. The MMBTA64LT1 features a total power dissipation of 1W at 25°C.

The MMBTA64LT1 also has a low saturation voltage of 250mV at a current gain of 100 and a maximum collector-base breakdown voltage of12V. It has a maximum collector-emitter voltage of 30V and a maximum emitter-base voltage of 5V. Its forward current transfer ratio (hFE) is 64-265, and the switching time is 2.25 ns. The MMBTA64LT1 has a total package size of 1.4x1.4x0.7mm.

The MMBTA64LT1 transistor exhibits excellent operational characteristics and is suitable for a variety of applications. It can be used in switching applications, signal amplification, and it can also be used for high-speed data transmission and reception. It is also used in consumer electronics, automotive components, and industrial automation.

The MMBTA64LT1 functions as an amplifier by blocking current flow in one direction and allowing current flow in the other direction. The transistor\'s base-emitter junction acts as the input to the circuit, and the collector-emitter junction acts as the output. The current flow in the circuit is controlled by the applied bias voltage on the base-emitter junction. By changing the base-emitter bias voltage, the current flow can be increased or decreased, which allows the signal to be amplified in the desired direction. This makes the MMBTA64LT1 ideal for signal amplification and switching applications.

The MMBTA64LT1 transistor is an excellent choice for applications that require high-speed data transfer, switching, and signal amplification. Its low power consumption, low noise, and excellent switching performance make it one of the most reliable transistors available. With its wide operating temperature range and small size, it can be used in a variety of applications and is sure to be a reliable and dependable component for any circuit.

The specific data is subject to PDF, and the above content is for reference

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