MMST4403-TP Allicdata Electronics
Allicdata Part #:

MMST4403TPMSTR-ND

Manufacturer Part#:

MMST4403-TP

Price: $ 0.04
Product Category:

Discrete Semiconductor Products

Manufacturer: Micro Commercial Co
Short Description: TRANS PNP 40V 0.6A SOT323
More Detail: Bipolar (BJT) Transistor PNP 40V 600mA 200MHz 200m...
DataSheet: MMST4403-TP datasheetMMST4403-TP Datasheet/PDF
Quantity: 9000
3000 +: $ 0.03043
6000 +: $ 0.02646
15000 +: $ 0.02249
30000 +: $ 0.02117
75000 +: $ 0.01985
150000 +: $ 0.01764
Stock 9000Can Ship Immediately
$ 0.04
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Transistor Type: PNP
Current - Collector (Ic) (Max): 600mA
Voltage - Collector Emitter Breakdown (Max): 40V
Vce Saturation (Max) @ Ib, Ic: 400mV @ 15mA, 150mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 2V
Power - Max: 200mW
Frequency - Transition: 200MHz
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Supplier Device Package: SOT-323
Base Part Number: MMST4403
Description

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Bipolar Junction Transistors (BJT), also known as a Single Transistor, is a transistor made from two p-type and n-type semiconductor layers - forming a semiconductor sandwich using a p-n junction. It is different from other types of transistors, such as Field Effect Transistors (FETs). Bipolar Junction Transistors are usually used in amplifying, switching and other high frequency applications.

MMST4403-TP is an NPN high-frequency transistor with excellent performance for RF and microwave applications. It is a popular transistor used in amplifying and modulating high frequency signals. The MMST4403-TP has a gain bandwidth of 990 MHz and a high switching speed of 3.5ns.

The MMST4403-TP is suitable for use in wireless communication devices, such as wireless routers, Bluetooth devices, and GSM phones. The MMST4403-TP is also applicable in RF, microwave, SMD and automotive electronics. It can be used in frequency, power and voltage amplifier circuits, and switching circuits.

The working principle of the MMST4403-TP is based on the transistor\'s basic structure. In a bipolar junction transistor, charge carriers move between two layers of a semiconductor sandwich. One layer has majority carriers of electrons, and the other layer has majority carriers of holes. Depending on whether the two layers are p-type or n-type, the transistor can be NPN or PNP.

In the case of the MMST4403-TP, the two layers are n-type and p-type, making it an NPN transistor. The electrons flow from the emitter to the collector and the holes flow from the collector to the emitter. When a base current is applied to the base-emitter region, the electrons and holes recombine, and act as a switch in an amplifier, modulator, or other type of circuit.

The MMST4403-TP is an excellent choice for high frequency applications due to its fast switching speed and wide gain bandwidth. It is easy to use and is highly reliable. Because of its excellent performance, it has been widely used in many communication and automotive electronics devices.

The specific data is subject to PDF, and the above content is for reference

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