Allicdata Part #: | MMST6427DITR-ND |
Manufacturer Part#: |
MMST6427-7 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Diodes Incorporated |
Short Description: | TRANS NPN DARL 40V 0.5A SC70-3 |
More Detail: | Bipolar (BJT) Transistor NPN - Darlington 40V 500m... |
DataSheet: | MMST6427-7 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Discontinued at Digi-Key |
Transistor Type: | NPN - Darlington |
Current - Collector (Ic) (Max): | 500mA |
Voltage - Collector Emitter Breakdown (Max): | 40V |
Vce Saturation (Max) @ Ib, Ic: | 1.5V @ 500µA, 500mA |
Current - Collector Cutoff (Max): | 1µA |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 20000 @ 100mA, 5V |
Power - Max: | 200mW |
Frequency - Transition: | -- |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | SC-70, SOT-323 |
Supplier Device Package: | SOT-323 |
Base Part Number: | MMST6427 |
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Bipolar junction transistors (BJTs) are one of the most widely used semiconductor components in both analog and digital circuits. Among them, the MMST6427-7 BJT is a popular choice due to its reliable performance. This article provides an overview of the MMST6427-7 BJT\'s application fields and working principle, as well as a comparison with similar products.
Application Fields
The MMST6427-7 is a NPN small signal/medium power junction transistor mainly used for switching and linear amplification. It features low noise and a wide bandwidth, making it very suitable for use in small signal amplifier circuits such as receivers, oscillators and audio amplifiers. In addition, the MMST6427-7 has high input and output impedance and low collector-emitter saturation voltage, so it can be used in digital circuits in place of transistors with higher on-resistance and saturation voltage, resulting in lower power consumption and better noise immunity.
Working Principle
The MMST6427-7 is a NPN BJT, which means it contains three layers: the base, the collector and the emitter. The base is the middle layer and is typically connected to a biasing circuit to "turn on" or "off" the transistor. When the base-emitter diode is forward-biased, it allows current to flow from the collector to the emitter. This current flow is proportional to the current flowing through the base-emitter diode. The collector current (or, in the case of digital transistors, collector-emitter voltage) is controlled with the base-emitter junction to switch, amplify or otherwise gate the signal.
Comparison
Compared to other transistors, the MMST6427-7 has lower power dissipation and high switching speed. It also has a lower noise than other transistors, such as the 2N3904 and 2N3906, which gives it an advantage in small signal amplifier circuits. The major drawback of the MMST6427-7 is its low collector-emitter current gain (hFE), which means that it requires higher current from the base in order to produce the same amount of collector current. This can be a problem if the circuit requires high current gain.
Conclusion
The MMST6427-7 is a reliable and versatile BJT transistor with a wide range of possible applications. Its low noise and wide bandwidth make it suitable for use in receivers, oscillators and audio amplifiers. Its low power dissipation, high switching speed and low collector-emitter saturation voltage also make it a good choice for digital circuits. Its main drawback is its low collector-emitter current gain, which can be a problem in circuits requiring high current gain.
The specific data is subject to PDF, and the above content is for reference
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