MMSTA13-7 Allicdata Electronics
Allicdata Part #:

MMSTA13DITR-ND

Manufacturer Part#:

MMSTA13-7

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Diodes Incorporated
Short Description: TRANS NPN DARL 30V 0.3A SC70-3
More Detail: Bipolar (BJT) Transistor NPN - Darlington 30V 300m...
DataSheet: MMSTA13-7 datasheetMMSTA13-7 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Discontinued at Digi-Key
Transistor Type: NPN - Darlington
Current - Collector (Ic) (Max): 300mA
Voltage - Collector Emitter Breakdown (Max): 30V
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 100µA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 10000 @ 100mA, 5V
Power - Max: 200mW
Frequency - Transition: 125MHz
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Supplier Device Package: SOT-323
Base Part Number: MMSTA13
Description

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The MMSTA13-7, manufactured by Central Semiconductor, is a single bipolar junction transistor (BJT). A BJT is a semiconductor device that controls the flow of electrical current. It is used to amplify and switch electronic signals, and to generate waveforms. The MMSTA13-7 offers superior switching performance and low noise. It is used in applications such as switching audio and video circuits, as well as communications circuits.

The MMSTA13-7 contains three terminals: the collector, the base, and the emitter. The collector is the power input of the device. The base is used for controlling the current flow between the collector and the emitter. The emitter is the power output terminal. The current flowing into the base is amplified, and the current flowing out of the emitter is controlled by the current flowing into the base.

The working principle of the MMSTA13-7 is based on the transistor action. The transistor consists of a semiconductor material, such as silicon or germanium, that is doped with impurities. Two regions, or junctions, are formed on the semiconductor material. The base region is lightly doped, while the emitter and collector regions are heavily doped. The transistor is then biased with a voltage to create the necessary electric field. When current flows into the base, it is amplified and controls the current flowing out of the emitter.

The MMSTA13-7 has a maximum emitter current rating of 1.5A and a continuous current rating of 130mA. It has a maximum allowable collector-emitter voltage of 100V and a maximum storage temperature of 150°C. The maximum total power dissipation is 500mW. It has a high input impedance and a low output impedance.

The MMSTA13-7 is a low-noise transistor, making it ideal for applications requiring low-noise operation. It is also designed for use in high-frequency switching applications such as audio and video circuits. Additionally, it is well suited for use in communications circuits where minimizing switching noise is important.

In applications such as audio and video circuits, the MMSTA13-7 can be used to control the flow of current. It can switch between on and off states with high speed, thus allowing the user to control the timing and duration of the circuit. It can switch between different levels of gain or cutoff frequencies, depending on the application.

The MMSTA13-7 is well suited for use in communications systems. It can be used to switch between different modulation techniques, such as frequency modulation or phase modulation. The MMSTA13-7 can also be used to generate waveforms, such as square waves or sine waves. It is also used to generate frequency or amplitude variation in radio transmission systems.

The MMSTA13-7 is a versatile BJT that can be used in a variety of applications. Its main advantages include low noise, high-speed switching, and low total power dissipation. It offers superior performance at a competitive price. It is an excellent solution for a variety of switching, amplifying, and waveform generating applications.

The specific data is subject to PDF, and the above content is for reference

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