MMSTA64-7

Series:	--
Packaging:	Tape & Reel (TR)
Part Status:	Discontinued at Digi-Key
Transistor Type:	PNP - Darlington
Current - Collector (Ic) (Max):	500mA
Voltage - Collector Emitter Breakdown (Max):	30V
Vce Saturation (Max) @ Ib, Ic:	1.5V @ 100µA, 100mA
Current - Collector Cutoff (Max):	100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:	20000 @ 100mA, 5V
Power - Max:	200mW
Frequency - Transition:	125MHz
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Surface Mount
Package / Case:	SC-70, SOT-323
Supplier Device Package:	SOT-323
Base Part Number:	MMSTA64

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Introduction

The MMSTA64-7 is a type of Bipolar Junction Transistor (BJT). This type of transistor is widely used in a variety of applications due its ability to switch fast, control current and work with lower supply voltages. The MMSTA64-7 is a NPN transistor and is available in an extremely small SC-70 package - allowing for its applications in a space-restricted environment. It is typically used as a switch or an amplifier.

Application Field

The MMSTA64-7 is primarily used as a signal amplifier or switch in telecommunication systems, broadband access systems and radio frequency (RF) circuit applications. In these applications, it is usually used to amplify signals and provide isolation.It is also used in low-noise signal amplification. The extremely small SC-70 package makes it ideal for applications where space is extremely limited, such as in personal audio systems, hearing aids and microphones.The MMSTA64-7 is ideal for automotive or battery-operated applications due to its low noise performance, lowcurrent consumption and wide operating temperature range. It can also be used as an amplifier in notebook computers, PDAs, cellular phones, digital cameras and other portable devices.

Working Principle

A Bipolar Junction Transistor (BJT) is composed of three layers of doped semiconductor material. The layers are composed of p-type semiconductor sandwiched between n-type semiconductors. The different layers are known as the emitter, base, and collector.When the base current is increased, electrons from the emitter are attracted to the base, causing an increase in the current between the emitter and collector. As this current increases, the amount of voltage gained between the emitter and collector increases as well. This is known as the amplification and gain of the transistor.The MMSTA64-7 is designed to operate with less power, making it ideal for miniaturized electronic design applications. It is also designed to have a wide operating temperature range and low noise performance making it an ideal choice for automotive or battery-operated electronics.

Conclusion

The MMSTA64-7 is a reliable and versatile Bipolar Junction Transistor (BJT) that is highly effective for a variety of applications. Its small SC-70 package allows for applications in space-restricted environments. Its low power requirements and wide operating temperature range make it ideal for automotive or battery-operated electronics. The MMSTA64-7\'s ability to amplify signals and provide isolation make it an essential component in telecommunication systems, broadband access systems, and RF circuit applications.

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