Allicdata Part #: | MMSTA06DITR-ND |
Manufacturer Part#: |
MMSTA06-7 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Diodes Incorporated |
Short Description: | TRANS NPN 80V 0.5A SC70-3 |
More Detail: | Bipolar (BJT) Transistor NPN 80V 500mA 100MHz 200m... |
DataSheet: | MMSTA06-7 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Discontinued at Digi-Key |
Transistor Type: | NPN |
Current - Collector (Ic) (Max): | 500mA |
Voltage - Collector Emitter Breakdown (Max): | 80V |
Vce Saturation (Max) @ Ib, Ic: | 250mV @ 10mA, 100mA |
Current - Collector Cutoff (Max): | 100nA |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 100 @ 100mA, 1V |
Power - Max: | 200mW |
Frequency - Transition: | 100MHz |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | SC-70, SOT-323 |
Supplier Device Package: | SOT-323 |
Base Part Number: | MMSTA06 |
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MMSTA06-7 Application Field and Working Principle
The MMSTA06-7 is a high voltage single bipolar junction transistor (BJT) featuring integrally molded resistors, making it a great choice for a range of applications. With its higher voltage rating, it is optimized for mobile device applications and its increased power gain also makes it suitable for audio amplifying.
It is a n-channel product, fabricated using the planar process, allowing for greater power capacity at lower cost. The planar process ensures longevity and low susceptibility to stress, allowing for improved reliability.
The MMSTA06-7 is a surface mount device, offering high planarity and low profiles, making it suitable for a variety of installations. The small heat sink and resistors are also completely integrally molded, greatly simplifying the device’s construction.
Principles of Operation
Because the MMSTA06-7 is a single bipolar junction transistor, its working principles are quite simple. There are three major components to a bipolar junction transistor, the emitter, base, and collector. When a voltage is applied to the base, current is drawn through the emitter, converting the input signal into a larger output signal when the current reaches the collector.
The working of the MMSTA06-7 is dependent on the bias condition, current gain, and power gain. The basic operation of a BJT assumes either a forward or reverse bias, depending on the mode in which it is operated. The forward bias is when the voltage applied to the base/emitter is higher than that for the collector/base, and the reverse bias is when the voltage at the collector/base is higher than the base/emitter. In either mode, the current along the emitter junction is strongly influenced by the voltage difference, producing current gain and power gain in the device.
Applications
Due to its higher voltage rating, the MMSTA06-7 is primarily used in mobile device applications, as well as audio-amplifying applications. Its increased power gain and low power dissipation also make it a great choice for audio amplifying, as it can be used to produce louder, higher-quality sound. Additionally, the integrated resistors and small heat sink make it suitable for even the most space-constrained installations.
The MMSTA06-7 can also be used in radios, amplifiers, televisions, and other electronic equipment where a high-gain single bipolar transistor is required. Regardless of the application, the device’s flexibility and high gain make it an excellent choice for mobile device and audio amplifying applications.
The specific data is subject to PDF, and the above content is for reference
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