MMSTA56Q-7-F Allicdata Electronics
Allicdata Part #:

MMSTA56Q-7-FDITR-ND

Manufacturer Part#:

MMSTA56Q-7-F

Price: $ 0.05
Product Category:

Discrete Semiconductor Products

Manufacturer: Diodes Incorporated
Short Description: GENERAL PURPOSE TRANSISTOR SOT32
More Detail: Bipolar (BJT) Transistor PNP 80V 500mA 50MHz 200mW...
DataSheet: MMSTA56Q-7-F datasheetMMSTA56Q-7-F Datasheet/PDF
Quantity: 3000
3000 +: $ 0.04384
6000 +: $ 0.03812
15000 +: $ 0.03240
30000 +: $ 0.03049
75000 +: $ 0.02859
Stock 3000Can Ship Immediately
$ 0.05
Specifications
Series: Automotive, AEC-Q101
Packaging: Tape & Reel (TR) 
Part Status: Active
Transistor Type: PNP
Current - Collector (Ic) (Max): 500mA
Voltage - Collector Emitter Breakdown (Max): 80V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 1V
Power - Max: 200mW
Frequency - Transition: 50MHz
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Supplier Device Package: SOT-323
Description

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

MMSTA56Q-7-F, a Bipolar Junction Transistor (BJT), is an NPN type single –phase device specially designed to meet consumer and industrial applications. It is a three terminal device composed of an emitter, base, and collector. It offers excellent switching speed and linear characteristics at both low and high currents while sustaining high voltage current gain.

The most common application of NPN type BJTs is the amplification of an input DC signal or current. The relative amplitude and phase of the output signal or current create a gain which can be used for various applications including amplification of audio and radio signals, digital electronic circuits and amplifiers.

Working principle: The NPN device works as a three-terminal device, consisting of an emitter, a base, and a collector. The NPN transistor relies on the carriers that are injected from the emitter into the base but are direct to the collector. The number of carriers injected from the emitter will depend on the amount of current entering from the base. The number of carriers that flow from the emitter out to the collector increases as the base current increases and as the voltage between the base and the collector increases. Therefore, the output current is basically determined by the gain function of the transistors.

The MMSTA56Q-7-F is based on the same principle and its main characteristics can be summarized as the following: the power dissipation is 1.5W, the DC current gain is minimum of 150, the collector-emitter saturation voltage is 200mV, the collector-emitter breakdown voltage is 4V (minimum), the collector-base breakdown voltage is 5V (minimum) and the minimum operating temperature is -65°C.

In summary, the MMSTA56Q-7-F is an ideal choice for applications requiring high-speed switching, linear characteristics at both low and high current levels and high voltage gain. The device is available in a variety of packages and can be used in a wide range of applications, including amplifiers, digital electronic circuits and audio and radio signal amplification. With its excellent switching speed, fast response time, linear current and voltage gain characteristics, the MMSTA56Q-7-F is a reliable and cost efficient solution for meeting the needs of most consumer and industrial applications.

The specific data is subject to PDF, and the above content is for reference

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