Allicdata Part #: | MMST3906-FDITR-ND |
Manufacturer Part#: |
MMST3906-7-F |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Diodes Incorporated |
Short Description: | TRANS PNP 40V 0.2A SC70-3 |
More Detail: | Bipolar (BJT) Transistor PNP 40V 200mA 300MHz 200m... |
DataSheet: | MMST3906-7-F Datasheet/PDF |
Quantity: | 36000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Transistor Type: | PNP |
Current - Collector (Ic) (Max): | 200mA |
Voltage - Collector Emitter Breakdown (Max): | 40V |
Vce Saturation (Max) @ Ib, Ic: | 300mV @ 5mA, 50mA |
Current - Collector Cutoff (Max): | -- |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 100 @ 10mA, 1V |
Power - Max: | 200mW |
Frequency - Transition: | 300MHz |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | SC-70, SOT-323 |
Supplier Device Package: | SOT-323 |
Base Part Number: | MMST3906 |
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The MMST3906-7-F is a single bipolar junction transistor (BJT) used for a variety of applications. Commonly used as a small signal switching transistor, it is also used in amplifier circuits, rectifiers and current regulators.
A bipolar junction transistor works by using two junctions to control current flow from a collector to an emitter. Both junctions consist of two different materials. In this case the two materials are P-type and N-type semiconductor material.
An N-type semiconductor material, like the one in this transistor, is created by doping it with an electrical impurity such as arsenic or phosphorus. These impurities allow for the reduction of electrons from one end of the atom (the anode) to the other (the cathode). The opposite is true for the P-type material - it is created by either doping it with a "hole" or introducing an electron deficiency.
The structure of the transistor then has a base, a collector and an emitter. Base current flows through the base-collector and the emitter, then it creates a flow of electrons from the collector to the emitter. This flow is either amplified or decreased depending on the state of the transistor, either cut-off, active or saturation modes.
The MMST3906-7-F is a NPN type, meaning that the base-collector junction is reversed biased (N-type) and the base-emitter junction is forward biased (P-type). This allows the external circuit to control the collector current, hence changing the current flow state, as needed.
As a signal switching transistor, the MMST3906-7-F can be used in digital amplifiers, mixers and detectors, as well as audio amplifiers or line amplifiers. It can also be used in switching power supplies and in automotive sensors.
It is important to note that the MMST3906-7-F has a maximum collector current of 5mA and an ideal operating temperature from -55°C to 300°C. It should never be operated above the maximum temperature, otherwise this could cause irreversible damage to the circuit.
Additionally, when using the MMST3906-7-F as a switching transistor, it is important to carefully consider the biasing conditions. In particular, when used in a common-emitter amplifier circuit, it is important to calculate the resistor values for the bias circuit to ensure efficient operation.
To conclude, the MMST3906-7-F is a single bipolar junction transistor which is a popular choice for many applications. From signal switching and audio amplifiers, to rectifiers and current regulators, the MMST3906-7-F can be used in a wide variety of projects and devices. It is important to consider the maximum current and operating temperature when using this transistor, as well as the appropriate biasing conditions.
The specific data is subject to PDF, and the above content is for reference
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