MMSTA92-7-F Allicdata Electronics
Allicdata Part #:

MMSTA92-FDITR-ND

Manufacturer Part#:

MMSTA92-7-F

Price: $ 0.06
Product Category:

Discrete Semiconductor Products

Manufacturer: Diodes Incorporated
Short Description: TRANS PNP 300V 0.1A SC70-3
More Detail: Bipolar (BJT) Transistor PNP 300V 100mA 50MHz 200m...
DataSheet: MMSTA92-7-F datasheetMMSTA92-7-F Datasheet/PDF
Quantity: 3000
3000 +: $ 0.05544
6000 +: $ 0.04990
15000 +: $ 0.04435
30000 +: $ 0.04158
75000 +: $ 0.03687
Stock 3000Can Ship Immediately
$ 0.06
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Transistor Type: PNP
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 300V
Vce Saturation (Max) @ Ib, Ic: 500mV @ 2mA, 20mA
Current - Collector Cutoff (Max): 250nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 30mA, 10V
Power - Max: 200mW
Frequency - Transition: 50MHz
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Supplier Device Package: SOT-323
Base Part Number: MMSTA92
Description

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Bipolar Junction Transistor (BJT), also known as bipolar transistors, are electronic devices used to amplify and switch an electrical signal. They consist of three terminals, the collector (C), the base (B) and the emitter (E). The BJT is an active device, meaning it requires a small electric current at the base terminal to control the electrical current at the collector and emitter terminals. The most common type of BJT used in electronics is the NPN type, where the emitter is connected to the negative terminal of the DC railroad and the collector to the positive terminal.

The MMSTA92-7-F BJT device is a single transistor package with a built-in protection diode and two leads. The two leads are the collector and the base. It has an operating voltage range from -50V to +50V and a maximum current rating of 0.25A. It has a maximum total power dissipation of 0.8W in active operation, and a maximum current gain of 100 at 10mA for the transistor.

The MMSTA92-7-F is designed for use in switching and amplification applications and is ideal for applications where a small signal is to be amplified to a much larger one. Its datasheet recommends its use for audio, video and power circuits. It is also suitable for DC motors, inductors, solenoids, and other applications where amplified control signals are needed.

The working principle of the MMSTA92-7-F BJT device is based on the behavior of electrons in a semiconductor material under an applied electric field. Electrons are easily influenced by electric fields and preferentially flow in one direction, depending on the polarity of the applied voltage. By utilizing this behavior, switching and amplification can be achieved in a BJT. When an electric field is applied to the base of the transistor, electrons are attracted to it, creating a "bigger hole." This hole facilitates the flow of current from the collector to the emitter, allowing for control over the current at the collector and emitter terminals.

The MMSTA92-7-F BJT device is a versatile and useful component that can be used to achieve a wide range of applications. With its built-in protection diode and current gain of up to 100 the MMSTA92-7-F is an ideal choice for audio, video, motors and power circuits. It has a simple yet highly effective working principle that allows for easy amplification of electrical signals.

The specific data is subject to PDF, and the above content is for reference

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