MMSTA63-7-F Allicdata Electronics
Allicdata Part #:

MMSTA63-FDITR-ND

Manufacturer Part#:

MMSTA63-7-F

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Diodes Incorporated
Short Description: TRANS PNP DARL 30V 0.5A SC70-3
More Detail: Bipolar (BJT) Transistor PNP - Darlington 30V 500m...
DataSheet: MMSTA63-7-F datasheetMMSTA63-7-F Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Transistor Type: PNP - Darlington
Current - Collector (Ic) (Max): 500mA
Voltage - Collector Emitter Breakdown (Max): 30V
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 100µA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 10000 @ 100mA, 5V
Power - Max: 200mW
Frequency - Transition: 125MHz
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Supplier Device Package: SOT-323
Base Part Number: MMSTA63
Description

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The MMSTA63-7-F is a transistor of the bipolar junction type (BJT). The device is a single NPN transistor with a 60 V collector-emitter voltage and a 0.7 Amp collector current. It is designed for use as a logic-level switching circuit, allowing logic levels to be shifted from a low voltage to a higher voltage level with minimal current loading on the logic circuit.

A bipolar junction transistor consists of three layers of semiconductor material separated by a thin interface. The two outer layers are made of N-type material, while the center layer is P-type material. These are referred to as the emitter, base, and collector regions, respectively. Current through the device is carried by electrons which recombine with holes at the collector and emitter levels. These electrons are produced in the emitter and travel through the base region. The thickness and doping of the base region determines the width of the base-emitter junction, and thus the voltage necessary for current to flow through the device.

The MMSTA63-7-F transistor can be used in logic-level switching circuits, or as analog amplifiers. For example, it can be used in a logic-level switching circuit to shift logic levels from a low voltage to a high voltage level with minimal current loading on the logic circuit. This allows the circuit to maintain a high on-state to off-state ratio. The transistor can also be used in analog amplifiers, where it is used to amplify signals of varying frequency and amplitude.

The MMSTA63-7-F is also suitable for use in power circuits, such as those used in power supplies. The transistor can be used as a controllable switch to switch power to a load. This is done by connecting the collector of the transistor to the power supply, and the emitter to the load. The base is connected to a control signal which determines the on and off states of the transistor. When the control signal is high, the transistor is in an on-state and current flows through the transistor to the load, turning it on. When the control signal is low, the transistor is in an off-state, and no current flows through the device, thus turning the load off.

In summary, the MMSTA63-7-F is a single NPN type transistor designed for use in logic-level switching circuits and analog amplifiers. It is suitable for use in a variety of applications, including power supplies, where it can be used to switch power to a load. The voltage levels at the collector and emitter are deciding factors in determining the performance of the device and must be set appropriately for the intended application.

The specific data is subject to PDF, and the above content is for reference

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