Allicdata Part #: | MPS650ZL1-ND |
Manufacturer Part#: |
MPS650ZL1 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | TRANS NPN 40V 2A TO-92 |
More Detail: | Bipolar (BJT) Transistor NPN 40V 2A 75MHz 625mW Th... |
DataSheet: | MPS650ZL1 Datasheet/PDF |
Quantity: | 1000 |
Series: | -- |
Packaging: | Tape & Box (TB) |
Part Status: | Obsolete |
Transistor Type: | NPN |
Current - Collector (Ic) (Max): | 2A |
Voltage - Collector Emitter Breakdown (Max): | 40V |
Vce Saturation (Max) @ Ib, Ic: | 500mV @ 200mA, 2A |
Current - Collector Cutoff (Max): | 100nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 75 @ 1A, 2V |
Power - Max: | 625mW |
Frequency - Transition: | 75MHz |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Through Hole |
Package / Case: | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
Supplier Device Package: | TO-92-3 |
Base Part Number: | MPS650 |
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MPS650ZL1 is a type of single bipolar junction transistor (BJT). It is mainly used in industrial, communication, consumer electronics and computer applications. This type of BJT is available in two power levels: low power and high power. MPS650ZL1 is a low power BJT and is typically used in consumer electronics and handheld applications.
A bipolar junction transistor is a type of electronic active device in which electrons can be easily moved from one region to another by applying an electric field. The two main regions of a BJT are the emitter and the collector. The emitter is the source of electrons and the collector the destination. A voltage applied to the base of the BJT controls the movement of electrons between the collector and the emitter.
The MPS650ZL1 has a low power rating of 1.5 watts at a voltage of 150mA and at a temperature of 25C. It has a current gain (hFE) of 40 and a maximum collector-emitter saturation voltage (VCE sat) of 0.4V. It also has a low capacitance of 0.18pF. The MPS650ZL1 is a general purpose bipolar transistor which is highly versatile and can be used in many different applications.
The working principle of the MPS650ZL1 can be explained by the following steps:
Firstly, when a current is applied to the base of the transistor, it creates an electric field between the emitter and the collector. This electric field then causes a flow of electrons between the emitter and the collector. This current flow is known as the collector current (IC).
Secondly, the electric field created in the base causes the electrons to be attracted to the collector, resulting in the base-emitter current (IB). This current is much smaller than the collector current, but it is still significant and is necessary for the transistor to work.
The third step is the transport of the electrons from the emitter to the collector, thus creating an electric current in the transistor. This current is known as the collector current (IC). The MPS650ZL1 can be used to amplify weak signals from the base, thus becoming an amplifier.
The MPS650ZL1 has a wide range of applications. It can be used in industrial applications such as motor and power supplies. It can also be used in communication applications such as mobile phones and base stations. In consumer electronics, the transistor can be used in amplifiers, radio receivers, televisions and in digital logic circuits. It is also used in computers and other microprocessor-based systems.
In conclusion, the MPS650ZL1 is a highly versatile and widely used single bipolar junction transistor. It is mainly used in industrial, communication, consumer electronics and computer applications. It is capable of amplifying weak signals, such as those generated by microphones, and can also be used in digital logic circuits. Its low power rating and low capacitance make it an ideal choice for many applications.
The specific data is subject to PDF, and the above content is for reference
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