MPS6651

Series:	--
Packaging:	Bulk
Part Status:	Obsolete
Transistor Type:	PNP
Current - Collector (Ic) (Max):	1A
Voltage - Collector Emitter Breakdown (Max):	25V
Vce Saturation (Max) @ Ib, Ic:	600mV @ 100mA, 1A
Current - Collector Cutoff (Max):	100nA
DC Current Gain (hFE) (Min) @ Ic, Vce:	50 @ 500mA, 1V
Power - Max:	625mW
Frequency - Transition:	100MHz
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Through Hole
Package / Case:	TO-226-3, TO-92-3 (TO-226AA)
Supplier Device Package:	TO-92-3

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MPS6651 is an NPN bipolar junction transistor (BJT) that can be used for various applications. This article will discuss the application fields and working principle of MPS6651.MPS6651 is a BJT that can operate in a wide voltage range from 90 volts to 500 volts. It is suitable for automotive, industrial, and commercial applications such as amplifier circuits, power supply circuits, switching circuits, and relay drivers. It is also used in power switching circuits for automotive engines, such as ignition systems and fuel injection systems.The working principle of MPS6651 is to use electric current to control the flow of electrons within a semiconductor material. A BJT consists of two p-type and one n-type semiconductor material that are arranged between two terminals, the base and the emitter. When a voltage is applied to the base terminal, electrons flowing from the emitter to the collector cause a current gain in the collector region. This current gain is proportional to the voltage applied to the base terminal. The current gain of a BJT is measured by its current gain, also known as beta.MPS6651 is available in a number of different packages ranging from small, surface-mountable devices to larger devices for through-hole mounting. The package size of MPS6651 is important since it determines the amount of current that can be passed through it. The larger the package size, the more current can be passed. The package size also determines the temperature range in which the transistor can operate.The MPS6651 has a maximum power dissipation of 1 watt and a maximum junction temperature of 150°C, making it suitable for use in a wide range of applications. In addition, the MPS6651 has a high switching speed and low saturation voltage, making it well-suited for use in circuits that require fast switching and high power output.In summary, MPS6651 is an NPN bipolar junction transistor that is suitable for a wide range of power circuits. It has a wide voltage range, high switching speed, and low saturation voltage, making it ideal for use in automotive, industrial, and commercial applications. Its package size and temperature range are also important factors in determining its suitability for a given application.

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