| Allicdata Part #: | MPS6514_D26Z-ND |
| Manufacturer Part#: |
MPS6514_D26Z |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | ON Semiconductor |
| Short Description: | TRANS NPN 25V 0.2A TO-92 |
| More Detail: | Bipolar (BJT) Transistor NPN 25V 200mA 625mW Thro... |
| DataSheet: |  MPS6514_D26Z Datasheet/PDF |
| Quantity: | 1000 |
| 1 +: | 0.00000 |
Specifications
| Series: | -- |
| Packaging: | Tape & Reel (TR) |
| Part Status: | Obsolete |
| Transistor Type: | NPN |
| Current - Collector (Ic) (Max): | 200mA |
| Voltage - Collector Emitter Breakdown (Max): | 25V |
| Vce Saturation (Max) @ Ib, Ic: | 500mV @ 5mA, 50mA |
| Current - Collector Cutoff (Max): | 50nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce: | 150 @ 2mA, 10V |
| Power - Max: | 625mW |
| Frequency - Transition: | -- |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Mounting Type: | Through Hole |
| Package / Case: | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
| Supplier Device Package: | TO-92-3 |
| Base Part Number: | MPS6514 |
Description
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The MPS6514_2D6Z is a single NPN bipolar transistor that is specifically designed for medium power linear and switching applications. The device is provided in a convenient 2D6 package, which offers high performance in a small footprint. It has an operating voltage of 7.0V, a collector-base breakdown voltage of 32V and a maximum power dissipation of 1W. The transistor also has a low thermal resistance, which makes it ideal for thermally demanding applications.
The transistor is primarily used in audio amplification, power supply, motor control, and general purpose switching applications. It is also largely used in automotive applications, such as in Starting, Lighting and Ignition (SLI) systems, in Engine Control Modules (ECMs), in transmission control systems, and in airbag control modules. The device is designed to have low on-resistance, which enables it to handle large currents while maintaining a high level of efficiency.
The transistor is based on the principle of charge carriers, which are negatively charged electrons and positively charged holes in the base region. When a voltage is applied to the base of the transistor, electrons flow from the base into the collector region, creating a current. This current then amplifies the signal applied to the base and is transmitted to the emitter, thus amplifying the signal. The gain of the transistor is dependent on the current through the base, the collector-emitter voltage, and the internal resistance of the base and the collector junction.
In terms of its construction, the MPS6514_D26Z transistor is made up of a semiconductor substrate with two layers of N-type material and one layer of P-type material. The N-type material forms the base and the P-type material forms the emitter. The collector is connected to the P-type material via a diffused alloy. The collector and the emitter are protected from short circuits and electromagnetic interference by an insulating layer. The device is also protected from static electricity, by a static guard ring.
The MPS6514_D26Z is a versatile device that has many applications in medium-power electronics. It is designed to have low on-resistance, a high collector-emitter voltage, and a high current gain, making it suitable for automotive, power supply, motor control, and general-purpose switching applications. In addition, its tiny size makes it an ideal choice for space-constrained applications.
The specific data is subject to PDF, and the above content is for reference
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