
Allicdata Part #: | MPS650ZL1GOSTB-ND |
Manufacturer Part#: |
MPS650ZL1G |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | TRANS NPN 40V 2A TO-92 |
More Detail: | Bipolar (BJT) Transistor NPN 40V 2A 75MHz 625mW Th... |
DataSheet: | ![]() |
Quantity: | 1000 |
Series: | -- |
Packaging: | Tape & Box (TB) |
Part Status: | Obsolete |
Transistor Type: | NPN |
Current - Collector (Ic) (Max): | 2A |
Voltage - Collector Emitter Breakdown (Max): | 40V |
Vce Saturation (Max) @ Ib, Ic: | 500mV @ 200mA, 2A |
Current - Collector Cutoff (Max): | 100nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 75 @ 1A, 2V |
Power - Max: | 625mW |
Frequency - Transition: | 75MHz |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Through Hole |
Package / Case: | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
Supplier Device Package: | TO-92-3 |
Base Part Number: | MPS650 |
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The MPS650ZL1G is a low cost, NPN, surface mount, silicon transistor that is sometimes referred to as an RF transistor. This device is primarily used for digital applications and is suitable for a variety of high frequency, small signal and radio frequency (RF) applications such as RF pre-amplifier, antenna front-end switch, wideband amplifier and UHF/VHF to microwave frequency conversion. The MPS650ZL1G is a single bipolar junction transistor (BJT). It belongs to a family of low-voltage, high-power, high-frequency NPN bipolar junction transistors that are designed to provide superior RF performance. The rated current of the MPS650ZL1G is up to 200mA.
The MPS650ZL1G transistor works according to the principle of a "base-emitter" or "collector-emitter" configuration. When the base-emitter junction is forward biased, a small current flows through the base. This current flow acts to turn on the emitter-collector junction and current will flow through the device. The MPS650ZL1G transistor has two terminals, the emitter and the collector. The collector is connected to a power supply, and the emitter is connected to ground, or the "load”. When the base-emitter junction is forward biased, current flows from the collector to the emitter and the device is "on”. When the base-emitter junction is reverse biased, current does not flow and the device is "off”.
The MPS650ZL1G has a range of applications, ranging from RF amplifiers, transmitters, receivers and switches, to small signal and UHF/VHF to microwave frequency converters. It can also be used in a wide range of other high-frequency circuits such as digital and logic circuits, instrumentation, telecommunication systems and in wireless communications. It is especially suited to high-frequency and small-signal applications where its low cost and remarkable performance make it an ideal choice. The high gain, small size and low power consumption of the device make it well suited for use in mobile phone applications, where long battery life is essential. The MPS650ZL1G is also used in high-speed analog and digital circuits, where its fast switching speed, low input capacitance and low saturation voltage are key factors.
In summary, the MPS650ZL1G is a low cost and high-performance NPN bipolar junction transistor device. It is ideal for RF applications such as amplifiers, transmitters, receivers and switches, and UHF/VHF to microwave frequency converters. It is suitable for use in a wide range of digital, analog and mixed-signal circuits and for applications where low power consumption and high switching speed are important. It is well suited for mobile communication applications and its small size and high power make it an ideal choice for use in high-frequency, small-signal and RF circuits.
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