Allicdata Part #: | MPS6560GOS-ND |
Manufacturer Part#: |
MPS6560G |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | TRANS NPN 25V 0.5A TO92 |
More Detail: | Bipolar (BJT) Transistor NPN 25V 500mA 60MHz 625mW... |
DataSheet: | MPS6560G Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Bulk |
Part Status: | Obsolete |
Transistor Type: | NPN |
Current - Collector (Ic) (Max): | 500mA |
Voltage - Collector Emitter Breakdown (Max): | 25V |
Vce Saturation (Max) @ Ib, Ic: | 500mV @ 50mA, 500mA |
Current - Collector Cutoff (Max): | 100nA |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 50 @ 500mA, 1V |
Power - Max: | 625mW |
Frequency - Transition: | 60MHz |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Through Hole |
Package / Case: | TO-226-3, TO-92-3 (TO-226AA) |
Supplier Device Package: | TO-92-3 |
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The MPS6560G is a transistor, classified as a bipolar junction transistor (BJT) single transistor. It is manufactured by Fairchild Semiconductor, and is part of their small signal MPS series with low noise and medium power. This semiconductor is a high gain transistor, which has been designed to provide a large amplification factor and is used within electronic circuits to increase the voltage and current flow or as a switch.
MPS6560G has a wide range of applications, and it is suitable for high-frequency, low-noise audio amplifiers, transceivers, transmitters, receivers, radios, and other circuits. With its high gain tolerance, MPS6560G can be used for applications such as linear and switching power supplies, as well as pulse amplifiers and oscillators. It also works well as a buffer amplifier and has been designed to provide excellent stability in terms of temperature, collector current, and other parameters.
The MPS6560G is a three-terminal device, with the three terminals being the emitter, collector, and base. The base is a control element, which allows current to flow through the transistor by applying a voltage or current to it. The collector and emitter are the output and input terminals, respectively. When current is applied to the base, electrons in the emitter-base junction switch on, allowing a greater collector-emitter current to flow. This procedure which is also called bias, is what gives the transistor its amplification.
The MPS6560G has a wide range of working principles, including Junction Field-Effect Transistor (JFET) operation, Bipolar Operation, and Clamping. The most commonly used principle is H-bridge Operation, which is defined as two parallel sections placed in opposite directions and connected to the same signal. This design allows the device to control its switching speed by controlling the bias voltage applied to each of the sections, giving a fast response and excellent switching characteristics.
Another important principle of the MPS6560G is its high gain, which allows it to achieve its high power level. The gain is achieved by using a specific dielectric material on the chip that provides an efficient energy transfer. This dielectric material also helps to reduce noise and distortion, making the MPS6560G a suitable choice for audio applications.
Finally, MPS6560G works best when it is correctly matched to its application requirements. This is why it is important for circuit designers to ensure that the transistor’s characteristics are suitable for the intended application. This can be done through careful selection of the manufacturing process, including the selection of the dielectric material, as well as through proper bias voltage and current sourcing. Only when this is done correctly can the desired performance levels be achieved from the device.
The specific data is subject to PDF, and the above content is for reference
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