Allicdata Part #: | MPS6652RLRA-ND |
Manufacturer Part#: |
MPS6652RLRA |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | TRANS PNP 40V 1A TO-92 |
More Detail: | Bipolar (BJT) Transistor PNP 40V 1A 100MHz 625mW T... |
DataSheet: | MPS6652RLRA Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
Transistor Type: | PNP |
Current - Collector (Ic) (Max): | 1A |
Voltage - Collector Emitter Breakdown (Max): | 40V |
Vce Saturation (Max) @ Ib, Ic: | 600mV @ 100mA, 1A |
Current - Collector Cutoff (Max): | 100nA |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 50 @ 500mA, 1V |
Power - Max: | 625mW |
Frequency - Transition: | 100MHz |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Through Hole |
Package / Case: | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
Supplier Device Package: | TO-92-3 |
Base Part Number: | MPS6652 |
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MPS6652RLRA is a high-performance 15-lead, single-bipolar junction transistor (BJT). It is made up of two layers of high-conducting silicon and a base layer that serves as the inner layer. The two layers are connected to one another through an epitaxial layer that serves as a bridge between them. The bipolar junction transistor is composed of two parts: the collector and the base. The collector is the part of the device that is biased and connected to the power supply and the base is the part that is used to generate and control the flow of current. The collector and base controls the current and voltage flow.
The MPS6652RLRA has a maximum collector-emitter voltage of 60V, and it has a maximum DC current gain of 165. It also has a maximum collector power dissipation of 10W. As such, it is suitable for applications that require higher power and higher voltage. It is also suitable for applications that require a high frequency switching capability, such as audio and high-speed data transmission.
The working principle of a bipolar junction transistor is based on the interaction between the base and the collector. When a voltage is applied to the base, a current is generated. This current is then amplified and applied to the collector, resulting in a voltage drop across the collector and a change in the base current. The collector voltage is regulated by the base current, and the regulated voltage is then applied to the load.
The MPS6652RLRA can be used in a variety of applications, such as power amplifiers, power drivers, high speed logic, and audio amplifiers. It can also be used in switching regulators, motor speed controls, booster circuits, and more. With its high voltage and power ratings, it is well-suited for high-voltage, high-frequency applications.
In conclusion, the MPS6652RLRA is a high-performance 15-lead, single-bipolar junction transistor (BJT) that is suitable for applications that require higher power and higher voltage, as well as applications that require high-frequency switching. Its working principle is based on the interaction between the base and the collector, with the collector voltage being regulated by the base current. It is suitable for a variety of applications including power amplifiers, power drivers, high speed logic, and audio amplifiers.
The specific data is subject to PDF, and the above content is for reference
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