MPS650 Allicdata Electronics
Allicdata Part #:

MPS650CS-ND

Manufacturer Part#:

MPS650

Price: $ 0.41
Product Category:

Discrete Semiconductor Products

Manufacturer: Central Semiconductor Corp
Short Description: TRANS NPN 40V 2A TO-92
More Detail: Bipolar (BJT) Transistor NPN 40V 2A 75MHz 625mW Th...
DataSheet: MPS650 datasheetMPS650 Datasheet/PDF
Quantity: 256
1 +: $ 0.36540
10 +: $ 0.28665
25 +: $ 0.24167
100 +: $ 0.19681
250 +: $ 0.16307
500 +: $ 0.13495
1000 +: $ 0.10121
2500 +: $ 0.09277
5000 +: $ 0.08715
Stock 256Can Ship Immediately
$ 0.41
Specifications
Series: --
Packaging: Bulk 
Part Status: Active
Transistor Type: NPN
Current - Collector (Ic) (Max): 2A
Voltage - Collector Emitter Breakdown (Max): 40V
Vce Saturation (Max) @ Ib, Ic: 500mV @ 200mA, 2A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 75 @ 1A, 2V
Power - Max: 625mW
Frequency - Transition: 75MHz
Operating Temperature: -65°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Supplier Device Package: TO-92
Description

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MPS650 Application Field and Working Principle

The MPS650 is a type of bipolar junction transistor (BJT) known as an NPN single transistor. It is most commonly used as a high-current power source in a wide variety of systems, including digital electronics, telecommunications, automotive, and industrial equipment. As one of the most popular transistors on the market today, the MPS650 is known for its reliable performance and efficient energy management.

The MPS650 is manufactured using a semiconducting material known as silicon. This material is resistant to electrical interference and is able to withstand very high temperatures without burning or melting. The advanced manufacturing process used by most modern transistor manufacturers ensures that the MPS650’s conductive elements can be designed to specific specifications for superior performance. These features make the MPS650 ideal for use in many high-power applications.

The basic working principle of the MPS650 is the same as most other BJT transistors: current flows from the collector to the emitter when a voltage potential is applied to the base electrode. The conductivity of the MPS650 is controlled by the type of material used in its construction and the polarity of the voltage applied to the base electrode. When the voltage applied is of a positive nature, then the current flowing through the transistor will be greater and the transistor will switch to its "on" state. Conversely, a negative voltage applied to the base will result in the transistor switching to its "off" state.

The main advantages of the MPS650 over other types of transistors are: its high current switching capability, its low collector-to-emitter saturation voltage, and its exceptional power efficiency. The MPS650 is able to support currents up to 7.5 A and, depending on the type of applications, can provide a better power efficiency than competing products. Additionally, due to its low saturation voltage, the current flows freely through the device, resulting in a more stable and efficient operation. The MPS650 is also compatible with a wide range of operating temperatures, making it a suitable choice for applications in a variety of different environments.

The MPS650 is ideal for applications that require reliable performance with efficient energy management. Its high current capabilities make it an excellent choice for use in digital electronics, telecommunications, automotive, and industrial systems. Thanks to its robust design, the MPS650 can be used in a wide range of applications, making it one of the most popular transistors on the market today.

The specific data is subject to PDF, and the above content is for reference

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