MPS6561 Allicdata Electronics
Allicdata Part #:

MPS6561-ND

Manufacturer Part#:

MPS6561

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: NPN SS GP AMP TRANSISTOR TO92
More Detail: Bipolar (BJT) Transistor NPN 20V 600mA 60MHz 625mW...
DataSheet: MPS6561 datasheetMPS6561 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Bulk 
Part Status: Obsolete
Transistor Type: NPN
Current - Collector (Ic) (Max): 600mA
Voltage - Collector Emitter Breakdown (Max): 20V
Vce Saturation (Max) @ Ib, Ic: 500mV @ 35mA, 350mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 350mA, 1V
Power - Max: 625mW
Frequency - Transition: 60MHz
Operating Temperature: --
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Supplier Device Package: TO-92-3
Description

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The MPS6561 is a bi-polar junction transistor (BJT) designed for high frequency and wide band applications, specifically those intended to be used in power amplifier, low noise amplifiers, and high frequency switching circuits. The MPS6561 is a small signal NPN transistor, with a maximum collector current of 120mA, a peak emitter-collector voltage of 80V, an emitter-base breakdown voltage of 6V, and reverse volts current of 50 mA. The MPS6561 is also characterized by its low thermal resistance, low capacitance and low power losses.

The MPS6561 can be used in a variety of applications and environments, such as in high frequency switching circuits, audio applications, and low noise amplifiers. This transistor can operate in temperature ranges from -55 to +150C and has a storage temperature range from -30 to +150C. It is also designed for relatively low noise operations and can handle high frequency scalar, direct and amplitude modulation, as well as noise cancelling methods. Furthermore, the MPS6561 is designed to have an extremely high voltage gain, which makes it ideal for wide band amplification.

The MPS6561 is also designed for low power losses and low capacitance, as well as an excellent breakdown voltage. Its high switching speed allows it to perform very well in audio applications, providing a high quality, low distortion output and low distortion-to-signal ratio. Its low thermal resistance also makes it suitable for power amplifiers, enabling it to run with high efficiency and low waste heat.

The working principle of the MPS6561 is relatively simple, and based on the principle of minority charge carriers passing through a junction between the base and the collector. The minority carriers are the electrons which are injected into the base region and move through the base and collector regions to the emitter, where they recombine. The current through the collector and emitter is then determined by the size of the base current and the collector-emitter voltage.

In order to operate the MPS6561, it is necessary to provide a source of base current, and this is done using a BJT driver, such as the BC847B driver, which is capable of delivering a maximum current of 25mA. The bias voltage is then adjusted using a voltage divider, with the collector voltage typically ranging from 0V to around 10V.

The MPS6561 is a versatile and reliable BJT, which is ideal for a wide range of applications including power amplification, low noise amplifiers, and high frequency switching circuits. It is designed to have a low thermal resistance, low power losses, excellent breakdown voltages, and a high gain. It is suitable for operation in a wide range of temperatures, and can be used in a variety of environments, due to its high switching speed.

The specific data is subject to PDF, and the above content is for reference

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