MPS650G

Series:	--
Packaging:	Bulk
Part Status:	Obsolete
Transistor Type:	NPN
Current - Collector (Ic) (Max):	2A
Voltage - Collector Emitter Breakdown (Max):	40V
Vce Saturation (Max) @ Ib, Ic:	500mV @ 200mA, 2A
Current - Collector Cutoff (Max):	100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:	75 @ 1A, 2V
Power - Max:	625mW
Frequency - Transition:	75MHz
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Through Hole
Package / Case:	TO-226-3, TO-92-3 (TO-226AA)
Supplier Device Package:	TO-92-3
Base Part Number:	MPS650

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

MPS650G is a type of bipolar junction transistor (BJT) featuring an NPN single configuration. The device is used in various low power consumption systems, primarily in low-voltage (5V) applications, as well as in DC-DC converters, LED drivers, and in power converters. It is also used for input amplifiers for switching circuits and for signal amplifiers. The MPS650G offers a wide range of voltage and current capabilities, with a maximum current rating of 750mA and a maximum voltage rating of 60V. It is designed to operate at a wide range of frequencies, making it a versatile device for multiple applications. The MPS650G’s design is based on a low-cost, low-power consumption fabrication process. The transistor features an emitter-base reverse-biased PN junction, which ensures a wide operating range for the device. It offers superior performance characteristics, such as low ON-resistance and fast switching times, and is highly reliable, with a guaranteed lifetime of 100,000 hours or more. The device is available in two versions: a conventional one, and a Supertex version, which offers higher efficiency, higher collector-emitter breakdown voltage, and lower noise figures. The working principle of the MPS650G is based on the junction of two semiconductor type materials, positively doped N-type and negatively doped P-type semiconductor. This junction forms a diode, which acts as a rectifier, allowing current to flow in one direction only. When the base-emitter voltage of the MPS650G is increased beyond its “breakdown voltage”, the base-emitter junction starts to conduct current. This current then enters the collector-base junction which, if the collector voltage is greater than the base voltage, will cause current to flow through the collector-emitter junction. This is the main function of the BJT – to control the current flow through the device by controlling the input base current. The MPS650G also offers added flexibility by allowing the transistor to be used both as a linear or as a switching device, depending on the application.When used in a linear configuration, the device is designed to output a uniformly adjustable current, and can be used for amplifying either an AC or DC signal.When used as a switching device, the transistor can deliver full or partially on/off cycles for switching applications, such as for DC-DC converter stages and pulse width modulators.The MPS650G offers high performance, with low current requirements and fast switching times, making it a popular choice for applications that require low power consumption. It also offers superior noise immunity, eliminating interference caused by external signals, making it ideal for applications where failure is not an option, such as in industrial and medical devices.All in all, the MPS650G is a versatile and reliable device, offering superior performance, flexibility, and durability. It is the perfect choice for a wide range of applications, and its ability to offer both linear and switching operations makes it a great choice for any application requiring low power and reliable operation.

The specific data is subject to PDF, and the above content is for reference

Part Number	Manufacturer	Price	Quantity	Description