MPS6515_D26Z Allicdata Electronics
Allicdata Part #:

MPS6515_D26Z-ND

Manufacturer Part#:

MPS6515_D26Z

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: TRANS NPN 25V 0.2A TO-92
More Detail: Bipolar (BJT) Transistor NPN 25V 200mA 625mW Thro...
DataSheet: MPS6515_D26Z datasheetMPS6515_D26Z Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Obsolete
Transistor Type: NPN
Current - Collector (Ic) (Max): 200mA
Voltage - Collector Emitter Breakdown (Max): 25V
Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 2mA, 10V
Power - Max: 625mW
Frequency - Transition: --
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Supplier Device Package: TO-92-3
Base Part Number: MPS6515
Description

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The MPS6515 is a single transistor device, classified as a Bipolar Junction Transistor (BJT) device. It is a three-pin device, with an emitter, a collector, and a base terminal. It is typically used in high-voltage applications such as high-power transistors, amplifiers, and motor control circuits. The main characteristics of this device are its ability to handle large collector-emitter or collector-base voltage, and its ability to dissipate high amounts of power. In addition, its lower emitter-base reverse saturation voltage makes it suitable for applications such as audio amplifiers.

The MPS6515_D26Z is a specialized version of the MPS6515, designed and manufactured by Diodes Incorporated. It features higher energy transfer efficiency, improved performance, and a built-in Power Transistor-Diode. This device is particularly suitable for high-frequency applications, such as high power switching/rectifying circuits, and audio power amplifiers.

The working principle of the MPS6515_D26Z is simple. When an electric current is applied to the base terminal, it will allow electrons to flow from the emitter to the collector, creating a current flow across the transistor. This current is then amplified and passed through the collector and emitter-base junction, increasing the current flow further. The amplified current can then be used to control devices such as motors or amplifiers. The built-in Power Transistor-Diode enables the transistor to operate at high-power frequencies, and it also increases the energy transfer efficiency of the device.

The MPS6515_D26Z has a wide variety of applications, including high power switching/rectifying circuits, motor and amplifier control, audio amplifiers, and high-frequency device control. In addition, it is used in the manufacture of power transistors and rectifiers, and in the design of high-power automotive and industrial electronics. This device provides excellent performance and energy efficiency, making it ideal for these types of applications.

In conclusion, the MPS6515_D26Z is a high-performance, high-power, low-voltage, high-frequency device that is suitable for a variety of applications. It is able to handle large amounts of power, dissipate heat efficiently, and provide excellent performance. Its high energy transfer efficiency and built-in Power Transistor-Diode make it an ideal choice for audio power amplifiers and high-frequency applications.

The specific data is subject to PDF, and the above content is for reference

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