Allicdata Part #: | MPS6515_D26Z-ND |
Manufacturer Part#: |
MPS6515_D26Z |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | TRANS NPN 25V 0.2A TO-92 |
More Detail: | Bipolar (BJT) Transistor NPN 25V 200mA 625mW Thro... |
DataSheet: | MPS6515_D26Z Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
Transistor Type: | NPN |
Current - Collector (Ic) (Max): | 200mA |
Voltage - Collector Emitter Breakdown (Max): | 25V |
Vce Saturation (Max) @ Ib, Ic: | 500mV @ 5mA, 50mA |
Current - Collector Cutoff (Max): | 50nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 250 @ 2mA, 10V |
Power - Max: | 625mW |
Frequency - Transition: | -- |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Through Hole |
Package / Case: | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
Supplier Device Package: | TO-92-3 |
Base Part Number: | MPS6515 |
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The MPS6515 is a single transistor device, classified as a Bipolar Junction Transistor (BJT) device. It is a three-pin device, with an emitter, a collector, and a base terminal. It is typically used in high-voltage applications such as high-power transistors, amplifiers, and motor control circuits. The main characteristics of this device are its ability to handle large collector-emitter or collector-base voltage, and its ability to dissipate high amounts of power. In addition, its lower emitter-base reverse saturation voltage makes it suitable for applications such as audio amplifiers.
The MPS6515_D26Z is a specialized version of the MPS6515, designed and manufactured by Diodes Incorporated. It features higher energy transfer efficiency, improved performance, and a built-in Power Transistor-Diode. This device is particularly suitable for high-frequency applications, such as high power switching/rectifying circuits, and audio power amplifiers.
The working principle of the MPS6515_D26Z is simple. When an electric current is applied to the base terminal, it will allow electrons to flow from the emitter to the collector, creating a current flow across the transistor. This current is then amplified and passed through the collector and emitter-base junction, increasing the current flow further. The amplified current can then be used to control devices such as motors or amplifiers. The built-in Power Transistor-Diode enables the transistor to operate at high-power frequencies, and it also increases the energy transfer efficiency of the device.
The MPS6515_D26Z has a wide variety of applications, including high power switching/rectifying circuits, motor and amplifier control, audio amplifiers, and high-frequency device control. In addition, it is used in the manufacture of power transistors and rectifiers, and in the design of high-power automotive and industrial electronics. This device provides excellent performance and energy efficiency, making it ideal for these types of applications.
In conclusion, the MPS6515_D26Z is a high-performance, high-power, low-voltage, high-frequency device that is suitable for a variety of applications. It is able to handle large amounts of power, dissipate heat efficiently, and provide excellent performance. Its high energy transfer efficiency and built-in Power Transistor-Diode make it an ideal choice for audio power amplifiers and high-frequency applications.
The specific data is subject to PDF, and the above content is for reference
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