MPS6515_D75Z

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The MPS6515_D75Z is a single, discrete, NPN bipolar junction transistor (BJT) developed by Diodes Incorporated. The device operates as a power switch in electronic devices, providing a current gain of >154 at an emitter current of 20mA. It is commonly used in audio amplifiers, power management systems, digital light processing (DLP) devices, and other digital displays.

The MPS6515_D75Z offers a variety of features which make it an ideal component in the applications mentioned above. These features include an adjustable collector to emitter voltage of 65V, an adjustable current gain of >154 at 20 mA, a collector-emitter breakdown voltage of 110V, an integration capacitor of 47nF, a power dissipation of 0.5 Watts, and an on-state voltage droop of 40mV. Additionally, the device has a low saturation voltage of 0.5V and a high collector-emitter breakdown voltage of 230V.

The working principle of the MPS6515_D75Z is based on the principle of electron flow. Electrons flow from the emitter, through the base, to the collector, and hence through the load. The current gain of the device is determined by the number of electrons passing through the base. The higher the current gain, the greater the voltage drop across the base-emitter junction. The current gain is a function of the emitter current, and is typically greater than 154 when the emitter current is 20mA.

In terms of application field, the MPS6515_D75Z is ideal for use in audio amplifiers. It is also well-suited to applications requiring high-voltage switching, such as power management systems, digital light processing (DLP) devices, and other digital displays. Other applications where the device has been successfully utilized include audio systems, power amplifiers, power supplies, and related devices.

In conclusion, the MPS6515_D75Z is an excellent choice for applications that require high-voltage switching and current gain. It has a variety of advantages, such as an adjustable collector to emitter voltage of 65V, an adjustable current gain of >154 at 20 mA, a collector-emitter breakdown voltage of 110V, an integration capacitor of 47nF, a power dissipation of 0.5 Watts, a low saturation voltage of 0.5V, and a high collector-emitter breakdown voltage of 230V. Its wide range of applications make this device an ideal selection for a variety of applications, ranging from audio amplifiers to digital displays.

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