| Allicdata Part #: | MPS651GOS-ND |
| Manufacturer Part#: |
MPS651G |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | ON Semiconductor |
| Short Description: | TRANS NPN 60V 2A TO-92 |
| More Detail: | Bipolar (BJT) Transistor NPN 60V 2A 75MHz 625mW Th... |
| DataSheet: |  MPS651G Datasheet/PDF |
| Quantity: | 1000 |
| 1 +: | 0.00000 |
Specifications
| Series: | -- |
| Packaging: | Bulk |
| Part Status: | Obsolete |
| Transistor Type: | NPN |
| Current - Collector (Ic) (Max): | 2A |
| Voltage - Collector Emitter Breakdown (Max): | 60V |
| Vce Saturation (Max) @ Ib, Ic: | 500mV @ 200mA, 2A |
| Current - Collector Cutoff (Max): | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce: | 75 @ 1A, 2V |
| Power - Max: | 625mW |
| Frequency - Transition: | 75MHz |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Mounting Type: | Through Hole |
| Package / Case: | TO-226-3, TO-92-3 (TO-226AA) |
| Supplier Device Package: | TO-92-3 |
| Base Part Number: | MPS651 |
Description
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The MPS651G is a type of transistor known as a Bipolar Junction Transistor, more specifically a single BJT. Transistors are devices used to control and amplify electrical signals in electronic circuits. The MPS651G is a majority carrier device, which means conventional current penetrates the base, or center, of the transistor and controls a larger current in the collector. In other words, the base controls the flow of electrons through the collector and emitter. The emitter of a BJT is the negative terminal and the collector is the positive terminal.The MPS651G is typically used in circuits where high speed switching, high current, and low noise are required. It is common in automotive and industrial applications, such as motor controls, off-line power supplies, battery charging, and audio amplifiers. It is also used in communications equipment where its low power consumption, noise, and switching characteristics make it attractive.MPS651G transistors can be used as either NPN or PNP devices. The NPN type uses negative base current and has two distinct regions of operation, active and saturation. In active mode, current flows through the collector and emitter and the voltage between them is relatively low. In saturation mode, current can flow freely between the collector and emitter and the voltage between them is relatively high.The PNP version of the MPS651G uses positive base current and has four regions of operation, active, forward active, reverse active, and saturation. In active mode, current flows through the collector and emitter and the voltage between them is relatively low. In forward active mode, current coexists between base and emitter while the collector-emitter junction is blocked. In reverse active mode, the collector-emitter junction is blocked, creating a high impedance between the two. In saturation mode, current flows freely between the collector and emitter and the voltage between them is relatively high.The MPS651G is capable of handling large amounts of current, with a maximum collector current of up to 4 Amps. It also has a low voltage drop, allowing it to effectively switch and amplify low voltage signals. The voltage drop depends on the current and type of BJT, but it is typically between 0.55 and 0.7V for this device. It also has good noise performance, making it suitable for low noise applications.The MPS651G has a wide range of application areas and is a popular choice for designers looking for a high performance transistor. It is used in a variety of automotive, industrial, and communications applications, where its fast switching and low noise characteristics are beneficial. It can also be used to amplify low voltage signals and provide enough current to power numerous applications, making it an ideal choice for a wide range of uses.The specific data is subject to PDF, and the above content is for reference
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