MPS651RLRAG

Series:	--
Packaging:	Tape & Reel (TR)
Part Status:	Obsolete
Transistor Type:	NPN
Current - Collector (Ic) (Max):	2A
Voltage - Collector Emitter Breakdown (Max):	60V
Vce Saturation (Max) @ Ib, Ic:	500mV @ 200mA, 2A
Current - Collector Cutoff (Max):	100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:	75 @ 1A, 2V
Power - Max:	625mW
Frequency - Transition:	75MHz
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Through Hole
Package / Case:	TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Supplier Device Package:	TO-92-3
Base Part Number:	MPS651

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Introduction
MPS651RLRAG is a type of single bipolar junction transistor (BJT) used in many electronic applications. It is commonly used in devices such as amplifiers, switches and rectifiers. This component is designed to provide high power and low noise levels while minimizing heating and power losses. The features of MPS651RLRAG make it ideal for high performance applications.Features
The key features of MPS651RLRAG include a maximum current rating of 10A, a voltage rating of 60V, an average power dissipation of 1.5W and a maximum reverse leakage current of 10mA. It also has a maximum operating temperature of 175°C and a thermal resistance of 140°C/W. This component is available in a surface-mount package, making it suitable for use in a wide range of electronics applications.Applications
MPS651RLRAG can be used in a variety of electronic applications, including audio and video amplifiers, high-frequency switching applications and power supplies. This component is often used to provide high power in video amplifiers, allowing for the transmission of large amounts of video data. It is commonly used in power supplies, providing a reliable and efficient supply of power. It is also found in high-frequency switching applications, where it is used to switch signals with low distortion and fast switching times.Working Principle
The working principle of MPS651RLRAG is based on the physical behavior of the base-emitter junction of a bipolar junction transistor (BJT). When a small current is applied to the base-emitter junction, a larger current is able to flow through the collector-emitter junction. This phenomenon is known as “current amplification” and is the basis of BJT operation. The current amplification of MPS651RLRAG is typically in the range of 50-100x.Conclusion
MPS651RLRAG is a type of single bipolar junction transistor (BJT) used in many electronic applications. It is designed to provide high power and low noise levels while minimizing heating and power losses. The components features make it ideal for high performance applications, including audio and video amplifiers, high-frequency switching applications and power supplies. The working principle of MPS651RLRAG is based on the physical behavior of the base-emitter junction of a BJT, with a typical current amplification of 50-100x.

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